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71V256S10YG is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 256KBIT PARALLEL 28SOJ. Review the specifications below when checking this part for your BOM.
The IDT71V256S10YG is a 3.3V CMOS asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a storage capacity of 256Kb, organized as 32K words by 8 bits. The device utilizes a parallel interface and offers a maximum access time of 10 ns. It operates within a supply voltage range of 3.0V to 3.6V and supports an industrial temperature range from -40°C to +85°C. The component is housed in a 28-pin Small Outline J-Lead (SOJ) package.
Verify RoHS compliance status carefully, as historical records indicate non-compliance for this specific part number variant. Confirm the manufacturer's discontinuation status and check for valid replacement components before procurement planning. Ensure the supplier provides official datasheets matching the 28-SOJ package specifications.
Select this component when a 10 ns access speed is required for 32Kx8 memory configurations. It is suitable for designs needing low standby power and 3.3V operation. Verify that the 28-SOJ package fits the board layout constraints. Consider the industrial temperature rating for harsh environments.
This part belongs to the 71V256SA family of high-performance SRAMs. It shares architectural similarities with other variants like the IDT71V256SA20YI but offers faster access times. The SOJ package distinguishes it from surface-mount alternatives, targeting specific legacy or specialized mounting requirements.
Check for direct pin-to-pin replacements such as the AS7C3256A series from Alliance Memory. Verify electrical compatibility regarding access times and voltage levels. Ensure the substitute component matches the 28-SOJ package form factor.
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