71V256S12YG

Overview

The IDT71V256S12YG is a standard asynchronous SRAM organized as 32K x 8, providing a total memory density of 256 kilobits. It features a maximum access time of 12 nanoseconds and operates on a single 3.3V power supply with a tolerance of ±0.3V. The device utilizes CMOS technology and is housed in a 28-pin Small Outline J-Lead (SOJ) package with a 0.300-inch body width. It supports commercial temperature ranges from 0°C to +70°C.

Feature Summary

• Low standby current consumption for extended battery life
• LVTTL-compatible inputs and outputs
• Fully static asynchronous circuitry without clocks or refresh requirements

Applications

• High-performance processor secondary cache
• General-purpose memory storage in embedded systems
• Buffering applications requiring fast random access

Procurement Notes

Verify the specific suffix 'YG' against the manufacturer's official datasheet to confirm the exact package dimensions and lead configuration. Ensure compliance with RoHS directives if required by your application, as older variants may not meet current environmental standards. Confirm availability status as this component series may be discontinued.

Selection Notes

Select this part when a 32K x 8 organization is required with 12ns speed. Compare against the 71V256SA12PZG for TSOP alternatives. Verify voltage compatibility with the host system's 3.3V logic levels. Check thermal specifications for the intended operating environment.

Part Context

This component belongs to the IDT 71V256 family of 3.3V Asynchronous Static RAMs. It is designed for high-speed data buffering and caching. The family offers various access times and package options to suit different performance and space constraints in electronic designs.

Replacement Considerations

Alliance Memory AS7C3256A-12JINTR is listed as a similar replacement option.