71V30L25TFI8

Overview

The 71V30L25TFI8 is a high-speed, asynchronous dual-port static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a storage capacity of 8 kilobits organized as 1K x 8 bits. The device supports independent access from two ports with separate control, address, and I/O pins, allowing simultaneous reads or writes to any memory location. Key electrical parameters include an access time of 25 nanoseconds and a write cycle time of 25 nanoseconds. It operates on a single 3.3V power supply within a range of 3.0V to 3.6V. The component is housed in a 64-pin Thin Quad Flat Package (TQFP) measuring 10x10 mm and is rated for industrial operating temperatures ranging from -40°C to +85°C.

Feature Summary

• True dual-ported architecture enables simultaneous independent access to the same memory location from both ports without conflict.
• On-chip port arbitration logic manages access conflicts automatically, ensuring data integrity during concurrent operations.
• Integrated interrupt flags facilitate direct communication between the two ports for status signaling and synchronization.
• Automatic power-down feature controlled by chip enable inputs allows entry into low standby power mode when not actively accessed.

Applications

• Real-time data buffering in telecommunications equipment requiring low-latency bidirectional data transfer.
• Industrial control systems utilizing asynchronous communication between multiple processing units.
• Embedded applications needing battery-backed memory retention with TTL-compatible logic levels.

Procurement Notes

Verify RoHS compliance status carefully, as documentation indicates variations across the 71V30 series; some variants are compliant while others may not be. Confirm the specific suffix 'I' denotes the industrial temperature grade (-40°C to +85°C) rather than commercial grade. Ensure the package type matches the required 64-TQFP footprint. Check for obsolescence notices or product change notifications (PCN) regarding assembly facility changes or labeling updates that may affect long-term availability.

Selection Notes

Select this component when true dual-port functionality is required for independent master-slave or peer-to-peer memory sharing. Choose the L-series variant if battery backup operation down to 2V data retention is necessary. Compare against the 71V30S series if commercial temperature range suffices, as it may offer different pricing or availability. Ensure the system design accommodates the 64-pin TQFP outline dimensions and pitch specifications for proper PCB layout.

Part Context

This part belongs to the Renesas 71V30 family of high-speed dual-port SRAMs. The family includes variants with different access times (25ns, 35ns, 55ns) and temperature grades. The 'L' suffix typically indicates enhanced features like battery backup support, while 'S' may denote standard commercial versions. The 'I' suffix specifies the industrial temperature range extension. This family is designed for applications requiring high-speed, non-volatile-like behavior with volatile memory speed.

FAQ

Does the 71V30L25TFI8 support simultaneous access to the same memory address?

Yes, the device features true dual-ported memory cells that allow simultaneous read or write access to the same memory location from both Port A and Port B.

What is the data retention capability during power loss?

The L-series variant supports battery backup operation, maintaining data retention down to 2V.

How does the device handle bus contention between the two ports?

On-chip port arbitration logic automatically resolves access conflicts, allowing independent asynchronous operation without external arbitration circuitry.