71V3557S85PFGI8

Memory IC Overview

The Renesas 71V3557S85PFGI8 is a 4.5Mb synchronous pipelined SRAM organized as 128K x 36 bits, housed in a 100-TQFP (14x14) package. It operates with a core voltage of 3.3V and supports 3.3V I/O levels within a supply range of 3.135V to 3.465V. The device features an access time of 8.5 ns and functions across an industrial temperature range of -40°C to +85°C.

Memory IC Feature Summary

• Supports ZBT technology to eliminate dead bus cycles during read-to-write or write-to-read transitions
• Includes self-timed write cycle controlled by global write control and byte write enable signals
• Integrates boundary scan JTAG interface compliant with IEEE 1149.1 standard

Memory IC Applications

• High-performance networking equipment requiring fast data buffering
• Industrial automation systems needing reliable memory storage
• Telecommunications infrastructure utilizing parallel SRAM interfaces

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to End-of-Life status. Confirm RoHS3 compliance and MSL level 3 handling requirements. Check for valid substitute part numbers such as the 71V547S100PFGI8 if original availability is restricted.

Memory IC Selection Notes

Select this component for applications requiring 36-bit wide data paths and synchronous operation. Ensure system design accommodates the specific 3.3V core and I/O voltage constraints. Verify that the 100-pin TQFP footprint matches the target PCB layout specifications.

Memory IC Part Context

This device belongs to the 71V3557 series of synchronous SRAMs designed for high-speed parallel data processing. It represents a specialized memory solution offering low latency and high throughput capabilities suitable for demanding embedded environments.

Memory IC Replacement Considerations

The 71V547S100PFGI8 is listed as a similar replacement option. Verify pin compatibility and electrical specifications before substitution.