71V35761S200BGGI8

71V35761S200BGGI8

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:1ef1039a8059 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:200 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.1 ns

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71V35761S200BGGI8

Overview

The 71V35761S200BGGI8 is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics Corporation. It features a parallel interface with a total storage capacity of 4.5 megabits, organized as 128K words by 36 bits. The device supports a maximum clock frequency of 200 MHz and achieves an access time of 3.1 nanoseconds. It operates within a supply voltage range of 3.135V to 3.465V and is designed for industrial temperature environments ranging from -40°C to +85°C. The component is housed in a 119-pin plastic ball grid array package measuring 14x22 millimeters.

Feature Summary

  • Supports high-speed synchronous data transfer via a parallel interface architecture
  • Provides fast data access capabilities suitable for real-time processing applications
  • Operates reliably across extended industrial temperature ranges

Applications

  • High-performance embedded systems requiring rapid data buffering
  • Industrial equipment control units needing reliable volatile memory
  • Network infrastructure hardware utilizing parallel bus architectures

Procurement Notes

Verify the specific suffix designation carefully during procurement, as variants such as the non-industrial BG8 version differ in operating temperature specifications. Confirm current availability status, as this component may be subject to discontinuation notices or production change notifications. Ensure that the selected package type matches the intended PCB footprint requirements for the 119-pin BGA configuration.

Selection Notes

Select this component when a wide industrial temperature range is mandatory for the application environment. Consider the 36-bit data width requirement, which distinguishes it from standard 8-bit or 16-bit memory options. Evaluate the power supply constraints to ensure compatibility with the specified 3.3V core voltage tolerance. Assess the physical space limitations to accommodate the 14x22mm BGA package dimensions on the target board layout.

Part Context

This part belongs to the 71V35761S family of synchronous SRAM devices. It shares architectural similarities with other members like the 71V35761S200BG8, differing primarily in environmental rating rather than electrical performance. The series is designed for applications demanding high bandwidth and low latency in parallel memory subsystems.

Replacement Considerations

The IDT71V35761S200BGGI8 is listed as an alias for this component. Verify pinout and electrical compatibility before substituting with other 71V35761S variants, noting that commercial grade versions lack the required industrial temperature rating.

71V35761S200BGGI871V35761S200BGGI8

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