FET, MOSFET Arrays ALD110908APAL product image

ALD110908APAL

$5.06
  • Description:MOSFET 2N-CH 10.6V 8PDIP
  • Series:EPAD®

SKU:35dce31bdc27 Category: Brand:

  
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ALD110908APAL is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Advanced Linear Devices Inc.. Its product description is MOSFET 2N-CH 10.6V 8PDIP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for ALD110908APAL

  • Description:MOSFET 2N-CH 10.6V 8PDIP
  • Series:EPAD®
  • Mfr:Advanced Linear Devices Inc.
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Matched Pair
  • FET Feature:-
  • Drain to Source Voltage (Vdss):10.6V
  • Current - Continuous Drain (Id) @ 25°C:12mA, 3mA
  • Rds On (Max) @ Id, Vgs:500Ohm @ 4.8V
  • Vgs(th) (Max) @ Id:810mV @ 1µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:2.5pF @ 5V
  • Power - Max:500mW
  • Operating Temperature:0°C ~ 70°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:8-DIP (0.300", 7.62mm)
  • Supplier Device Package:8-PDIP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for ALD110908APAL

ALD110908APAL

FET, MOSFET Arrays Overview

The ALD110908APAL is a dual N-channel enhancement mode MOSFET array manufactured by Advanced Linear Devices. It utilizes EPAD® CMOS technology to provide factory-matched transistors with a standard gate threshold voltage of +0.80V. The device operates within a drain-source breakdown voltage of 10.6V and dissipates up to 500mW. Key electrical parameters include a typical drain-source on-resistance of 500 Ohms, an input capacitance of 2.5pF, and a DC current gain exceeding 10^8. It is housed in an 8-pin PDIP package and functions within a temperature range of 0°C to +70°C.

FET, MOSFET Arrays Feature Summary

  • Factory-matched dual N-channel MOSFETs for precise offset voltage control
  • Enhancement-mode operation with a standard +0.80V gate threshold voltage
  • High input impedance and extremely low leakage currents
  • Excellent thermal tracking due to monolithic construction

FET, MOSFET Arrays Applications

  • Precision current mirrors
  • Voltage choppers
  • Differential amplifier input stages
  • Analog switches and multiplexers

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package type and lead-free status. Ensure that the required operating temperature range aligns with the component's specified limits. Confirm pinout compatibility during integration. Cross-reference datasheet revisions to validate parameter consistency before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component when low offset voltage and tight matching between dual channels are critical. The +0.80V threshold suits low-voltage systems requiring fast switching. Verify that the 500 Ohm on-resistance meets load requirements. Consider the PDIP-8 package for through-hole mounting needs. Evaluate thermal management capabilities given the 500mW power dissipation limit.

FET, MOSFET Arrays Part Context

This part belongs to the ALD1108xx/ALD1109xx family of precision matched pair MOSFET arrays. The '1109' designation indicates a dual-channel configuration, while '08' specifies the +0.80V threshold voltage. The 'PAL' suffix denotes an 8-pin Plastic DIP package with lead-free (RoHS) compliance. These devices share core EPAD® technology characteristics with other members of the series.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes within the same family include the ALD110908APCL (SOIC-8), ALD110908ASCL (SOIC-8), and ALD110908SAL (SOIC-8). For different packages, consider the ALD110908PCL or ALD110908PAL variants. Ensure any replacement maintains the +0.80V threshold and dual-channel configuration.

ALD110908APALALD110908APAL
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