Single FETs, MOSFETs APT18M100S product image

APT18M100S

$8.19
  • Description:MOSFET N-CH 1000V 18A D3PAK
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube

SKU:646e833e0de8 Category: Brand:

  
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APT18M100S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 18A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT18M100S

  • Description:MOSFET N-CH 1000V 18A D3PAK
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1000 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:700mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:4845 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):625W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D3PAK
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT18M100S

APT18M100S

Single FETs, MOSFETs Overview

The APT18M100S is a single N-channel Power MOSFET manufactured by Microchip Technology, utilizing Silicon technology and the Power MOS 8 architecture. It is housed in a D3PAK-3 (TO-268) surface-mount package. The device features a drain-source breakdown voltage of 1 kV and supports a continuous drain current of 18 A. Key electrical parameters include a maximum on-resistance of 700 mOhms, a gate charge of 150 nC, and a power dissipation rating of 625 W. It operates within a temperature range of -55 C to +150 C.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 1 kV drain-source breakdown voltage for robust operation in demanding environments.
  • Optimized low on-resistance characteristics inherent to the Power MOS 8 generation for improved efficiency.
  • Surface-mount D3PAK-3 packaging designed for automated assembly and compact board layouts.

Single FETs, MOSFETs Applications

  • High-frequency switch mode power supplies
  • Industrial motor control systems
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to ensure correct package variant and tape/reel specifications. Confirm RoHS compliance status directly from the datasheet before integration. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with moderate current handling is required in a surface-mount form factor. Compare the 700 mOhm on-resistance against thermal management requirements. Ensure the 1 kV rating exceeds the maximum circuit voltage spikes. Evaluate the 150 nC gate charge against available gate drive capabilities.

Single FETs, MOSFETs Part Context

This device belongs to the APT series of Power MOSFETs from Microchip Technology, specifically leveraging the Power MOS 8 technology node. This family is engineered for high-performance switching applications requiring reliable operation at elevated voltages. The SMD designation indicates its suitability for modern PCB manufacturing processes compared to through-hole alternatives.

Single FETs, MOSFETs Replacement Considerations

The APT18M100B serves as a pin-compatible alternative in a TO-247 through-hole package with similar electrical ratings. Verify that the target application can accommodate the different physical footprint and mounting style before substituting.

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