APT33N90JCCU2

Single FETs, MOSFETs Overview

The APT33N90JCCU2 is an N-Channel Power MOSFET manufactured by Microsemi Corporation. It features a drain-source voltage (Vdss) of 900 V and a continuous drain current (Id) of 33 A at case temperature. The device is housed in a SOT-227 chassis mount package, suitable for high-power applications. It offers a maximum power dissipation of 290 W at case temperature.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 900 V breakdown rating
• Robust thermal performance for chassis mounting
• Designed for high-current switching operations

Single FETs, MOSFETs Applications

• Industrial motor drives
• High-voltage power supplies
• Inverter circuits

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer part number against official Microchip/Microsemi documentation to ensure authenticity. Confirm that the SOT-227 package type matches your chassis requirements. Check for any specific handling instructions regarding thermal interface materials for optimal heat dissipation during installation.

Single FETs, MOSFETs Selection Notes

Select this component when a 900 V rating is required for high-side or low-side switching. Ensure the thermal management system can handle the 290 W dissipation limit. Compare on-resistance values if conduction losses are critical to the specific circuit design efficiency.

Single FETs, MOSFETs Part Context

This device belongs to the discrete power MOSFET category from Microsemi, now part of Microchip Technology. It is designed for rugged industrial environments requiring high voltage isolation and reliable switching performance in compact chassis-mounted form factors.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip substitution guides for compatible alternatives. Verify pinout compatibility and thermal characteristics before replacing. Generic equivalents may not match the specific reliability standards of the original component.