APT37F50B

Single FETs, MOSFETs Overview

The APT37F50B is a Power MOS 8 N-Channel Fast Recovery Epitaxial Diode (FREDFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device features a drain-source breakdown voltage of 500 V and a continuous drain current rating of 37 A. Key electrical parameters include a maximum on-resistance of 120 mOhms, a gate threshold voltage of 4 V, and a total gate charge of 160 nC. It supports a maximum power dissipation of 590 W and operates within a temperature range from -55 C to +150 C.

Single FETs, MOSFETs Feature Summary

• Integrates an intrinsic body diode with fast recovery characteristics for efficient switching applications.
• Utilizes advanced Power MOS 8 planar technology to achieve low conduction losses and high reliability.
• Designed for robust thermal performance with a wide operating junction temperature range.

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Motor drive systems requiring fast switching
• Uninterruptible power supply (UPS) inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested component matches the exact Power MOS 8 generation and pinout configuration required for your circuit design. Cross-reference the datasheet revision date to ensure compliance with current manufacturing standards and material declarations.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V blocking capability and approximately 37 A continuous current handling are required in a TO-247 form factor. Consider the 120 mOhm on-resistance for thermal management calculations in high-current applications. Ensure the gate drive circuitry can support the specified 160 nC gate charge for optimal switching speed without excessive driver loss.

Single FETs, MOSFETs Part Context

This part belongs to the Microchip Power MOS 8 family of discrete semiconductors. The series combines MOSFET switching capabilities with integrated fast recovery diodes. These devices are engineered for high-efficiency power electronics, offering improved figure-of-merit compared to previous generations through optimized cell density and epitaxial layer design.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Direct replacements must match the 500 V rating, 37 A current capacity, and TO-247-3 package dimensions. Verify that any substitute maintains compatible gate charge and on-resistance values to preserve circuit timing and thermal performance.