APT40SM120B

Single FETs, MOSFETs Overview

The APT40SM120B is a Silicon Carbide (SiC) N-Channel Power MOSFET manufactured by Microsemi Corporation. It features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 41 A at case temperature. The device operates in enhancement mode with a maximum power dissipation of 273 W at Tc. It utilizes a TO-247 package and supports junction temperatures up to 175°C.

Single FETs, MOSFETs Feature Summary

• Constructed using Silicon Carbide technology for high thermal stability
• Designed for high-voltage switching applications
• Integrated body diode configuration

Single FETs, MOSFETs Applications

• High-frequency power conversion systems
• Industrial motor drives
• Uninterruptible power supplies (UPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific revision status, as datasheets indicate Rev C from September 2016. Confirm package integrity upon receipt, as the TO-247 form factor requires proper mounting. Check manufacturer announcements for lifecycle status changes, as component availability may vary across distributors.

Single FETs, MOSFETs Selection Notes

Select this component when high-temperature operation up to 175°C is required. The SiC material offers superior performance compared to silicon alternatives in high-voltage environments. Ensure gate drive circuits are compatible with the device's threshold characteristics and switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to Microsemi’s high-voltage discrete semiconductor portfolio. It represents the transition toward wide-bandgap materials in power electronics. The TO-247 packaging facilitates efficient heat dissipation for medium-power industrial applications.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal resistance values if considering alternative manufacturers.