Single FETs, MOSFETs APT47N65BC3G product image

APT47N65BC3G

  • Description:MOSFET N-CH 650V 47A TO247
  • Series:CoolMOS™
  • Mfr:Microsemi Corporation
  • Package:Tube

SKU:019027e5b980 Category: Brand:

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APT47N65BC3G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 650V 47A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT47N65BC3G

  • Description:MOSFET N-CH 650V 47A TO247
  • Series:CoolMOS™
  • Mfr:Microsemi Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:70mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7015 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):417W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247 [B]
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for APT47N65BC3G

APT47N65BC3G

Single FETs, MOSFETs Overview

The APT47N65BC3G is a Super Junction MOSFET rated for 650V drain-source voltage and 47A continuous drain current. It features an ultra-low on-state resistance of 0.070Ω at VGS=10V, minimizing conduction losses. The device incorporates low Miller capacitance and total gate charge (Qg) to facilitate high-speed switching with reduced drive requirements. Rated for avalanche energy operation, it supports repetitive and single-pulse avalanche conditions. Thermal performance includes a junction-to-case thermal resistance of 0.30°C/W.

Single FETs, MOSFETs Feature Summary

  • Ultra-low RDS(ON) reduces conduction losses in power conversion circuits
  • Low Miller capacitance and gate charge enable fast switching transitions
  • Avalanche energy rated for robustness against inductive load switching events

Single FETs, MOSFETs Applications

  • High-frequency DC-DC converters
  • Motor control systems
  • Power factor correction circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the datasheet lists both TO-247 and D3PAK options under the same part number prefix. Confirm that the 'G' suffix corresponds to the exact ordering configuration needed for your assembly process. Ensure electrostatic discharge handling procedures are followed during installation.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction loss and high switching frequency are critical. The 650V rating suits medium-voltage applications. Evaluate the thermal impedance curves to ensure adequate heat sinking for the expected duty cycle. Consider the avalanche energy rating if the application involves inductive loads prone to voltage spikes.

Single FETs, MOSFETs Part Context

This device belongs to Microsemi's COOLMOS family, utilizing Super Junction technology for enhanced efficiency compared to conventional planar MOSFETs. It is designed for general-purpose power switching applications requiring high reliability and low thermal resistance.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other 650V, ~47A Super Junction MOSFETs from various manufacturers. Verify pinout compatibility and thermal characteristics before substitution.

APT47N65BC3GAPT47N65BC3G

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