APT4F120S

$3.79

Description：MOSFET N-CH 1200V 4A D3PAK
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube

SKU:115f85e9df32 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT4F120S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 4A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT4F120S

Description：MOSFET N-CH 1200V 4A D3PAK
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs：43 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1385 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：175W (Tc)
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D3PAK
Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT4F120S

APT4F120S

Single FETs, MOSFETs Overview

The APT4F120S is a single N-Channel Fast Recovery Epitaxial Diode (FREDFET) MOSFET manufactured by Microchip Technology. It utilizes silicon technology and is housed in a D3PAK-3 (TO-268) surface-mount package. The device features a drain-source breakdown voltage of 1.2 kV and supports a continuous drain current of 4 A. Key electrical characteristics include a maximum on-resistance of 4.2 Ohms, a gate threshold voltage of 2.5 V, and a total gate charge of 43 nC. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 175 W.

Single FETs, MOSFETs Feature Summary

Integrates fast recovery epitaxial diode technology for efficient switching performance.
Designed for surface-mount installation using the D3PAK-3 package format.
Supports high-voltage operation up to 1.2 kV with enhancement mode control.

Single FETs, MOSFETs Applications

High-frequency power conversion circuits
Inductive load switching applications
General-purpose high-voltage discrete switching

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors to ensure compatibility with design requirements. Confirm RoHS compliance status and packaging details prior to procurement. Cross-reference the manufacturer part number APT4F120S with official component databases to validate authenticity and technical specifications against potential counterfeit risks.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a single N-channel configuration with high voltage tolerance. The 4.2 Ohm on-resistance and 4 A current rating suit low-to-medium power switching tasks. Ensure the driving circuit can handle the 43 nC gate charge and that thermal management accommodates the 175 W dissipation capability within the specified operating temperature range.

Single FETs, MOSFETs Part Context

This component belongs to the APT series of power MOSFETs from Microchip Technology, formerly known as Advanced Power Technology. The series focuses on high-voltage silicon devices optimized for various industrial and consumer power electronics applications. The APT4F120S specifically addresses needs for compact, high-reliability switching elements in space-constrained surface-mount designs.