APT5012JN

Single FETs, MOSFETs Overview

The APT5012JN is an N-channel enhancement mode high voltage power MOSFET manufactured by Microsemi Corporation. It utilizes a single die ISOTOP package and operates with a drain-source voltage of 500V and a continuous drain current of 43A at 25°C case temperature. The device features a maximum on-state resistance of 0.12Ω and supports a pulsed drain current of 172A. Total power dissipation reaches 520W at 25°C, with a linear derating factor of 4.16 W/°C. Operating and storage junction temperatures range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High voltage capability with 500V drain-source breakdown rating
• Robust thermal management via single die ISOTOP packaging
• Capable of handling significant pulsed currents for inductive loads

Single FETs, MOSFETs Applications

• Industrial motor control systems
• High voltage switching circuits
• Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific part number against official Microsemi documentation to confirm exact electrical tolerances and package integrity. Ensure that sourcing channels provide authentic components matching the datasheet specifications. Cross-reference the manufacturer's latest revision notes for any updates to the static or dynamic characteristics before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation and substantial current handling capabilities. Consider the thermal impedance characteristics and the necessity for efficient heat sinking due to the power dissipation ratings. Evaluate the gate charge requirements against the driving circuitry to ensure optimal switching performance within the specified operating temperature range.

Single FETs, MOSFETs Part Context

This component belongs to the APT series of high voltage power MOSFETs produced by Microsemi Corporation. These devices are engineered for demanding power electronics applications where reliability under high stress conditions is critical. The ISOTOP package design facilitates direct mounting to heatsinks, optimizing thermal transfer efficiency for industrial and automotive environments.

Single FETs, MOSFETs Replacement Considerations

The APT5010JN serves as a verified substitute within the same product family, offering identical voltage ratings but a higher continuous drain current capacity of 48A and lower on-state resistance.