APT5015BVRG

Single FETs, MOSFETs Overview

The APT5015BVRG is a single N-Channel enhancement mode Power MOS V® MOSFET manufactured by Microchip Technology. It features a 500V drain-source breakdown voltage and a continuous drain current of 32A at case temperature. The device exhibits a maximum on-resistance of 150 mΩ. It is housed in a TO-247 package with a power dissipation rating of 370W. The gate-source voltage range is ±30V, with a threshold voltage of 4V. Operating temperatures span from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed for high-voltage, fast-switching applications utilizing Power MOS V® technology.
• Enhancement mode operation provides reliable switching performance.

Single FETs, MOSFETs Applications

• High-voltage power switching circuits
• Fast-switching power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'BVRG' against official Microchip documentation to confirm pinout configuration and packaging details. Ensure compatibility with thermal management requirements given the 370W dissipation rating. Confirm RoHS compliance status through current datasheets as specifications may evolve. Cross-reference the manufacturer part number with authorized distributor listings to validate authenticity and sourcing channels.

Single FETs, MOSFETs Selection Notes

Select this component when a 500V N-Channel MOSFET with moderate on-resistance is required for through-hole mounting. The TO-247 package facilitates effective heat dissipation for high-current applications. Consider the 32A continuous current rating and 150 mΩ resistance trade-off for efficiency versus cost. Verify that the 4V threshold voltage aligns with the intended gate drive logic levels.

Single FETs, MOSFETs Part Context

This device belongs to the APT series of Power MOS V® MOSFETs from Microchip Technology. The series is characterized by high-voltage capabilities and robust construction for industrial power electronics. The TO-247 form factor is standard for high-power discrete transistors requiring direct heatsink mounting.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other 500V N-Channel MOSFETs in TO-247 packages with comparable Rds(on) and Id ratings. Verify pinout compatibility before substitution. Check datasheets for equivalent switching speeds and thermal characteristics to ensure circuit performance remains within design limits.