Single FETs, MOSFETs APT50M65B2LLG product image

APT50M65B2LLG

  • Description:MOSFET N-CH 500V 67A T-MAX
  • Series:POWER MOS 7®
  • Mfr:Microsemi Corporation
  • Package:Tube

SKU:7c521a365809 Category: Brand:

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APT50M65B2LLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 500V 67A T-MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT50M65B2LLG

  • Description:MOSFET N-CH 500V 67A T-MAX
  • Series:POWER MOS 7®
  • Mfr:Microsemi Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:67A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:65mOhm @ 33.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs:141 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:7010 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):694W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:T-MAX™ [B2]
  • Package / Case:TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for APT50M65B2LLG

APT50M65B2LLG

Single FETs, MOSFETs Overview

The APT50M65B2LLG is a through-hole N-channel Power MOSFET from the POWER MOS 7 series, manufactured by Microchip Technology. It features a T-MAX [B2] package (TO-247-3) with a drain connection. Key electrical parameters include a 500 V drain-source voltage (Vdss), a continuous drain current of 67 A at case temperature, and a maximum power dissipation of 694 W. The device exhibits a typical on-resistance of 65 mΩ at 10 V gate drive and 33.5 A drain current. It supports an operating junction temperature range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes POWER MOS 7 technology for optimized switching performance and low conduction losses.
  • Features a rugged T-MAX [B2] TO-247-3 package designed for high-power thermal management.
  • Includes built-in avalanche rating capability for enhanced robustness in inductive load applications.

Single FETs, MOSFETs Applications

  • High-frequency switched-mode power supplies
  • Motor control drives
  • DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix against official Microchip documentation, as variations such as 'APT50M65B2FLLG' or 'APT50M65LFLLG' exist within the same family. Confirm RoHS compliance status and specific pinout configurations directly from the manufacturer's datasheet before procurement to ensure compatibility with existing circuit designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage isolation and moderate current handling in a standard through-hole form factor. Consider the 65 mΩ on-resistance for efficiency calculations and verify that the thermal resistance characteristics of the T-MAX package align with the system's heatsinking requirements for sustained operation at elevated temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the APT50M65 family of high-voltage power MOSFETs. It shares the core die technology with variants like APT50M65LFLLG but differs in packaging and specific terminal configurations. The T-MAX package provides a direct thermal path to the mounting surface, distinguishing it from standard plastic encapsulated equivalents.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with APT50M65B2FLLG for potential pin-compatible alternatives within the same product line. Ensure any substitute maintains the 500 V rating and comparable on-resistance values to preserve circuit performance integrity.

APT50M65B2LLGAPT50M65B2LLG

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