APT50M80B2VRG

$12.72

Description：MOSFET N-CH 500V 58A T-MAX
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube

SKU:4b1c391ae6cf Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT50M80B2VRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 500V 58A T-MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT50M80B2VRG

Description：MOSFET N-CH 500V 58A T-MAX
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：80mOhm @ 29A, 10V
Vgs(th) (Max) @ Id：4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：423 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：8797 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：T-MAX™ [B2]
Package / Case：TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for APT50M80B2VRG

APT50M80B2VRG

Single FETs, MOSFETs Overview

The APT50M80B2VRG is a Power MOS V N-Channel enhancement mode power MOSFET manufactured by Microsemi. It utilizes silicon technology and features a TO-247-3 through-hole package with the case connected to the drain. The device is rated for a minimum drain-source breakdown voltage of 500V and supports a maximum continuous drain current of 56A at case temperature. Its maximum on-resistance is specified at 0.08 ohms. The component is avalanche rated, fast switching, and RoHS compliant.

Single FETs, MOSFETs Feature Summary

Power MOS V generation technology minimizes JFET effect and reduces on-resistance
Fast switching speeds achieved through increased packing density
Avalanche rated capability for robust operation under transient conditions

Single FETs, MOSFETs Applications

High voltage power switching circuits
Industrial motor control systems
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix VRG against official Microsemi documentation to confirm lead-free status and tape-and-reel packaging configuration. Ensure the TO-247-3 package dimensions match the target PCB footprint requirements. Confirm that the 500V rating and 56A current handling are sufficient for the intended thermal management design constraints.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with low on-resistance is required in a through-hole package. The Power MOS V technology offers improved performance over previous generations. Consider the thermal dissipation capabilities inherent to the TO-247-3 housing for heat sink mounting applications.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of power MOSFETs from Microsemi, specifically utilizing the Power MOS V architecture. This family focuses on high-voltage N-channel enhancement mode devices designed for efficiency and speed. The B2VRG designation indicates specific packaging and compliance attributes within this product line.

Single FETs, MOSFETs Replacement Considerations

Consult official Microsemi substitution guides for verified equivalents. Generic replacements may not match the specific Power MOS V characteristics or avalanche ratings.

Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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