APT5518BFLLG

$9.10

Description：MOSFET N-CH 550V 31A TO247-3
Series：POWER MOS 7®
Mfr：Microsemi Corporation
Package：Tube

SKU:3e26a0344158 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT5518BFLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 550V 31A TO247-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT5518BFLLG

Description：MOSFET N-CH 550V 31A TO247-3
Series：POWER MOS 7®
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：550 V
Current - Continuous Drain (Id) @ 25°C：31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：180mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：67 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3286 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：403W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT5518BFLLG

APT5518BFLLG

Single FETs, MOSFETs Overview

The APT5518BFLLG is a N-channel enhancement mode power MOSFET from the Power MOS 7 series, manufactured by Microsemi Corporation. It features a TO-247-3 through-hole package with a drain-source breakdown voltage of 550V and a continuous drain current of 31A at 25°C case temperature. The device exhibits a maximum on-state resistance of 0.180Ω at VGS=10V and ID=15.5A. Total gate charge is typically 67nC at 10V. Maximum power dissipation is 403W at 25°C case temperature. Operating junction temperature ranges from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Power MOS 7 technology combines low conduction and switching losses with fast switching speeds via a patented metal gate structure.
Optimized for easier driving with lower input capacitance, Miller capacitance, and total gate charge compared to previous generations.
Includes a fast recovery body diode suitable for inductive load applications.

Single FETs, MOSFETs Applications

High-voltage DC-DC converters
Motor control circuits
Inductive load switching

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official Microsemi documentation due to potential counterfeit risks. Confirm package integrity and lead plating quality upon receipt. Ensure handling procedures account for electrostatic discharge sensitivity. Check datasheet revisions for any updates to electrical characteristics or thermal limits before final integration.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient switching performance. The TO-247-3 package facilitates effective heat sinking for high-power dissipation scenarios. Evaluate thermal management requirements based on the specified linear derating factor and transient thermal impedance curves under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the APT5518(B,S)FLL family, which includes variants like APT5518SFLL. The BFLL suffix denotes the TO-247 through-hole package configuration. The product line utilizes Power MOS 7 technology to achieve superior performance metrics in high-voltage power switching environments.