APT6030BVRG

Single FETs, MOSFETs Overview

The APT6030BVRG is a single N-channel power MOSFET manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device features an enhancement mode channel configuration with a drain-source breakdown voltage of 600 V and a continuous drain current rating of 12 A at case temperature. Its maximum on-resistance is specified at 750 mOhms under standard test conditions, with a gate-source threshold voltage of 2 V. The component supports a wide operating temperature range from -55°C to +150°C junction temperature and offers a power dissipation capacity of 260 W.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode power MOSFET construction
• High-voltage 600 V drain-source breakdown capability
• Robust thermal management via TO-247-3 through-hole mounting
• Wide operational temperature range up to 150°C junction

Single FETs, MOSFETs Applications

• Industrial motor control systems
• Power supply switching circuits
• Inverter applications

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official Microchip documentation before procurement. Confirm that the suffix 'BVRG' corresponds to the specific tape-and-reel or tube packaging variant required for your assembly process. Ensure compatibility with your PCB footprint and thermal design requirements. Check for any recent product change notifications or lifecycle status updates directly from the manufacturer to avoid obsolescence risks during production.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high-voltage switching with moderate current handling capabilities. The TO-247-3 package provides reliable thermal performance for through-hole implementations. Consider the 750 mOhm on-resistance for efficiency calculations in low-to-medium frequency switching applications. Ensure gate drive voltages remain within the specified ±30 V limits to prevent device damage.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of power MOSFETs from Microchip Technology, formerly known as Advanced Power Technology. The series is designed for general-purpose power switching applications. The TO-247-3 package is a standard industry form factor for high-power discrete semiconductors, facilitating easy integration into heatsink-based thermal management solutions common in industrial equipment.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip cross-reference guides for verified substitutes. Ensure any replacement matches the 600 V rating, 12 A current capacity, and TO-247-3 package dimensions. Verify pinout compatibility and electrical characteristics such as Rds(on) and Qg to maintain circuit performance.