Single FETs, MOSFETs APT60N60SCSG product image

APT60N60SCSG

$18.79
  • Description:MOSFET N-CH 600V 60A D3PAK
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:d0eca4343240 Category: Brand:

  
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APT60N60SCSG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 600V 60A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT60N60SCSG

  • Description:MOSFET N-CH 600V 60A D3PAK
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:45mOhm @ 44A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:7200 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):431W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D3PAK
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT60N60SCSG

APT60N60SCSG

Single FETs, MOSFETs Overview

The APT60N60SCSG is a surface-mount N-channel Power MOSFET from Microchip Technology, housed in a TO-268 (D3PAK) package. It features a 600V drain-source breakdown voltage and a continuous drain current of 60A at case temperature. The device exhibits a maximum on-resistance of 45 milliohms at 10V gate drive. Key electrical characteristics include a maximum gate charge of 190nC at 10V and an input capacitance of 7200pF at 25V. It supports a junction temperature range from -55°C to +150°C with a maximum power dissipation of 431W.

Single FETs, MOSFETs Feature Summary

  • Utilizes Superjunction C6 technology for optimized high-voltage performance
  • Designed for efficient switching in high-frequency applications
  • Features low electromagnetic interference through quiet switching characteristics

Single FETs, MOSFETs Applications

  • Server and telecom power systems
  • Solar inverters
  • Power factor correction circuits
  • Semiconductor capital equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm package type and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component matches the exact D3PAK footprint requirements for your PCB layout before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount solution is required for 600V applications. Ensure the thermal design accommodates the specified 431W power dissipation limit. Verify that the gate drive voltage meets the 10V requirement to achieve the minimum on-resistance specification during operation.

Single FETs, MOSFETs Part Context

This part belongs to the Power MOS 8 family of high-speed, high-voltage N-channel switch-mode power transistors. The series is engineered for hard and soft switching in high-frequency environments above 500W, offering lower EMI and reduced cost compared to previous generations.

Single FETs, MOSFETs Replacement Considerations

Check the official datasheet for direct pin-compatible alternatives within the same voltage and current ratings. Verify that any substitute maintains identical package dimensions and thermal resistance values to ensure seamless integration without redesigning the heat sink or PCB.

APT60N60SCSGAPT60N60SCSG
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