APT8030LVRG

Single FETs, MOSFETs Overview

The APT8030LVRG is a single N-channel enhancement mode power MOSFET manufactured by Microchip Technology using silicon technology. It is housed in a TO-264-3 through-hole package and operates within a temperature range of -55°C to +150°C. Key electrical specifications include a drain-source breakdown voltage (Vds) of 800 V, a continuous drain current (Id) of 27 A, and a maximum gate-source voltage (Vgs) of ±30 V. The device features a typical on-resistance (Rds(on)) of 300 mΩ at specified conditions, with a gate charge (Qg) of 340 nC. Power dissipation capability is rated at 520 W, supported by turn-on and turn-off delay times of 16 ns and 59 ns respectively.

Single FETs, MOSFETs Feature Summary

• High-voltage blocking capability suitable for demanding power switching applications
• Low on-resistance design optimized for conduction loss reduction
• Robust thermal performance with high power dissipation rating

Single FETs, MOSFETs Applications

• Industrial motor drives
• Power supply circuits
• Inverter systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'VRG' against official Microchip documentation to confirm RoHS compliance and lead-free status. Ensure the TO-264-3 package dimensions match your PCB footprint requirements. Confirm that the 800V rating aligns with your system's peak voltage stresses. Cross-reference the datasheet revision date to ensure all electrical parameters are current.

Single FETs, MOSFETs Selection Notes

Select this component when an 800V N-channel MOSFET with moderate current handling is required. The 300 mΩ on-resistance offers a balance between conduction losses and switching performance. Consider the TO-264-3 package for through-hole mounting solutions where higher power dissipation than standard surface-mount packages is needed. Evaluate thermal management strategies given the 520 W power rating.

Single FETs, MOSFETs Part Context

This part belongs to the APT series of power MOSFETs from Microchip Technology, formerly known as Advanced Power Technology. The series is designed for general-purpose power switching applications requiring high voltage and current capabilities. The TO-264-3 package provides a robust mechanical connection and efficient heat dissipation path compared to smaller form factors.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 800V Vds, N-channel configuration, and TO-264-3 package. Verify pinout compatibility before substitution. Check if alternative parts offer lower Rds(on) or Qg values for improved efficiency.