APTM120DA15G

Single FETs, MOSFETs Overview

The APTM120DA15G is a single N-channel MOSFET manufactured by Microsemi Corporation. It features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 60 A at case temperature (Tc). The device supports a maximum power dissipation of 1250 W at Tc. It utilizes the SP6 chassis mount package. The gate threshold voltage (Vgs(th)) is specified at 5 V with a test current of 2.5 mA. Maximum gate-source voltage (Vgs) is ±30 V. The input capacitance (Ciss) is 7736 pF at 25 V, and the total gate charge (Qg) is 300 nC at 10 V. Operating junction temperature ranges from -40°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage N-channel silicon MOSFET technology designed for robust power switching applications.
• Chassis mount SP6 package configuration optimized for direct thermal management and mechanical stability.
• Capable of handling high peak power dissipation suitable for demanding industrial environments.

Single FETs, MOSFETs Applications

• Boost chopper circuits in power conversion systems
• Industrial motor drive inverters
• High-voltage DC-DC converter stages

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Microsemi or Microchip Technology distributors. Confirm lot traceability and datasheet revisions prior to integration. Note that this part may be subject to end-of-life status; validate current production availability and obsolescence notices with the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 1200 V blocking capability and 60 A continuous current handling in a chassis-mount form factor. Ensure thermal interface materials are compatible with the SP6 package base. Verify gate drive requirements align with the 5 V threshold and 30 V maximum limits. Consider parasitic inductance effects given the high-current application context.

Single FETs, MOSFETs Part Context

This device belongs to the Microsemi high-voltage discrete semiconductor portfolio, specifically within the single FET/MOSFET category. It is part of the Advanced Power Technology line, now integrated under Microchip Technology following corporate acquisitions. The SP6 package is standard for high-power industrial modules requiring direct mounting to heatsinks.

Single FETs, MOSFETs Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Cross-reference pinouts and thermal characteristics when evaluating alternatives. No specific substitute part numbers are confirmed in public documentation without explicit manufacturer validation.