AS2M040120P

$19.29

Description：N-CHANNEL SILICON CARBIDE POWER
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Bulk

SKU:bf1c3ff77856 Category: Single FETs, MOSFETs Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

AS2M040120P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists ANBON SEMICONDUCTOR (INT'L) LIMITED. Its product description is N-CHANNEL SILICON CARBIDE POWER. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AS2M040120P

Description：N-CHANNEL SILICON CARBIDE POWER
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：55mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：142 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：2946 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：330W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for AS2M040120P

AS2M040120P

Single FETs, MOSFETs Overview

The AS2M040120P is an N-Channel Silicon Carbide Power MOSFET in a TO-247-3 package. It features a 1200V drain-source voltage and a maximum on-resistance of 53mΩ at VGS=18V. The device supports a continuous drain current of 68A at 25°C case temperature, with a pulsed current rating of 100A. Key electrical parameters include a gate threshold voltage of 2.6V typical, input capacitance of 2070pF, and total gate charge of 121nC. Thermal performance includes a junction-to-case resistance of 0.44°C/W and a maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes silicon carbide technology for higher system efficiency and reduced cooling requirements.
Enables increased power density and higher system switching frequencies.
Features low forward voltage drop and fast reverse recovery characteristics in the integrated body diode.

Single FETs, MOSFETs Applications

Renewable energy systems
High voltage DC/DC converters
Switch mode power supplies
EV battery chargers

Single FETs, MOSFETs Procurement Notes

Verify the specific revision level against the datasheet document ID AS-3270020 Revision B to ensure parameter alignment. Confirm that the TO-247-3 package dimensions match the target PCB footprint requirements. Ensure thermal management solutions support the specified junction-to-case thermal resistance for the intended operating environment.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring superior thermal performance compared to silicon alternatives. Consider the 1200V rating and low RDS(on) for efficient power conversion. Evaluate the gate drive requirements based on the 18V recommended operational limit and the specific switching energy values provided in the dynamic characteristics section.

Single FETs, MOSFETs Part Context

This part belongs to the ANBON SEMICONDUCTOR (INT'L) LIMITED lineup of silicon carbide power devices. It is designed as a robust solution for demanding power electronics environments where high breakdown voltage and efficient heat dissipation are critical for maintaining system reliability and performance over time.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools or manufacturer documentation for verified equivalent parts. Do not assume compatibility based solely on package similarity; verify all electrical ratings and pin configurations before substitution.