Single FETs, MOSFETs ATP104-TL-HX product image

ATP104-TL-HX

  • Description:MOSFET P-CH 30V 75A ATPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:09df0d452097 Category: Brand:

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ATP104-TL-HX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 30V 75A ATPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for ATP104-TL-HX

  • Description:MOSFET P-CH 30V 75A ATPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8.4mOhm @ 38A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:76 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3950 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):60W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:ATPAK
  • Package / Case:ATPAK (2 Leads+Tab)

Single FETs, MOSFETs datasheet and documents for ATP104-TL-HX

ATP104-TL-HX

Single FETs, MOSFETs Overview

The ATP104-TL-HX is a P-Channel Power MOSFET from onsemi, housed in an ATPAK package. It features a drain-to-source voltage of -30 V and a continuous drain current of -75 A. The device exhibits a static drain-to-source on-state resistance (RDS(on)) of 8.4 mΩ at VGS = -10 V and 13.5 mΩ at VGS = -4.5 V. Key electrical parameters include a total gate charge of 76 nC, forward transfer admittance of 70 S, and maximum power dissipation of 60 W at 25°C case temperature. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Low ON-resistance for efficient conduction
  • Large current handling capability
  • Slim package design
  • Compatible with 4.5V drive levels

Single FETs, MOSFETs Applications

  • Power switching applications
  • High current load management
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'HX' against official documentation, as datasheets reference 'TL'. Confirm availability status, as this component may be subject to discontinuation or limited supply. Ensure compliance with RoHS and halogen-free requirements if specified for the project. Validate pinout compatibility during integration.

Single FETs, MOSFETs Selection Notes

Select based on required RDS(on) at specific gate voltages (-4.5V vs -10V). Consider thermal management due to 60W dissipation rating. Evaluate gate charge for switching speed requirements. Ensure package dimensions fit the PCB layout constraints.

Single FETs, MOSFETs Part Context

Part of the ATP104 series of single-channel P-Channel MOSFETs. Designed for high-efficiency power switching with low on-resistance. Manufactured by onsemi using silicon technology.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the ATP104 family or similar ATPAK packages. Verify matching electrical characteristics such as VDS, ID, and RDS(on). Ensure pinout compatibility before substitution.

Single FETs, MOSFETs FAQ

What is the maximum allowable power dissipation?

The maximum allowable power dissipation is 60 W at a case temperature of 25°C.

Is the device compatible with 4.5V logic levels?

Yes, the device supports 4.5V drive, with an RDS(on) of 13.5 mΩ at VGS = -4.5 V.

ATP104-TL-HXATP104-TL-HX

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