Single FETs, MOSFETs ATP212-S-TL-H product image

ATP212-S-TL-H

  • Description:MOSFET N-CH 60V 35A ATPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)

SKU:894024abd6d6 Category: Brand:

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ATP212-S-TL-H is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 35A ATPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for ATP212-S-TL-H

  • Description:MOSFET N-CH 60V 35A ATPAK
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:35A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:ATPAK
  • Package / Case:ATPAK (2 Leads+Tab)

Single FETs, MOSFETs datasheet and documents for ATP212-S-TL-H

ATP212-S-TL-H

Single FETs, MOSFETs Overview

The ATP212-S-TL-H is a single N-channel enhancement mode power MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an ATPAK-3 surface-mount package with three pins. The device features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 35 A. Key electrical characteristics include a maximum on-resistance of 37 mΩ, a gate-source voltage range of -10 V to +10 V, and a maximum power dissipation of 40 W. It operates at temperatures up to +150 °C.

Single FETs, MOSFETs Feature Summary

  • N-channel enhancement mode configuration for efficient switching applications
  • ATPAK-3 surface-mount package design optimized for thermal performance
  • Silicon-based construction ensuring reliable operation under high current loads

Single FETs, MOSFETs Applications

  • Power management circuits requiring low on-resistance
  • DC-DC converter designs utilizing the ATPAK package
  • General purpose switching applications within specified voltage limits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm lot codes and date codes against current production status. Ensure handling procedures comply with electrostatic discharge standards for surface-mount devices. Review latest datasheets for any process change notifications prior to integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with 35 A capability is required in an ATPAK package. Compare on-resistance values against circuit efficiency targets. Verify that the gate drive voltage aligns with the specified ±10 V limit. Consider thermal management requirements given the 40 W power dissipation rating and maximum junction temperature of 150 °C.

Single FETs, MOSFETs Part Context

This part belongs to the ATPAK family of power MOSFETs from onsemi. These components are designed for high-current applications where compact footprint and thermal efficiency are critical. The ATPAK package offers improved heat dissipation compared to traditional SMD packages, supporting robust performance in power electronics systems.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers for ATP212-S-TL-H were not identified in the provided source material. Consult official onsemi documentation or distributor databases for verified cross-references before implementation.

ATP212-S-TL-HATP212-S-TL-H

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