AUIRF1018E

Single FETs, MOSFETs Overview

The AUIRF1018E is an automotive-grade, single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes a TO-220AB through-hole package and operates with a drain-source breakdown voltage (VBRDSS) of 60 V. The device features a maximum on-resistance (RDS(on)) of 8.4 mΩ at a gate-source voltage of 10 V. Continuous drain current ratings are specified as 79 A at a case temperature of 25°C and 56 A at 100°C. Key electrical parameters include a typical total gate charge (Qg) of 46.0 nC and a thermal resistance from junction to case (Rth(JC)) of 1.32 °C/W.

Single FETs, MOSFETs Feature Summary

• Automotive Q101 certified for reliability in demanding vehicle environments
• HEXFET technology providing low on-resistance and fast switching characteristics
• Robust thermal performance with high power dissipation capability

Single FETs, MOSFETs Applications

• Automotive power switching applications
• Low-side load control systems
• High-current motor drive circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturing status and availability directly with authorized distributors or the manufacturer, as product lifecycles can change. Confirm that the TO-220AB package dimensions match your PCB footprint requirements. Ensure compliance with RoHS and REACH regulations if required for your specific market region. Check for any specific automotive quality certifications relevant to your supply chain needs.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-certified N-channel MOSFET with a 60 V rating is required. The 8.4 mΩ RDS(on) makes it suitable for high-efficiency power conversion where conduction losses must be minimized. Consider the 79 A continuous current capability for heavy-duty loads. The TO-220AB package facilitates easy mounting to heatsinks for thermal management in space-constrained automotive enclosures.

Single FETs, MOSFETs Part Context

This part belongs to the IRF series of power MOSFETs, specifically tailored for the automotive market under the AUIRF designation. It represents a legacy design from International Rectifier, now integrated into Infineon's portfolio. The HEXFET structure is known for its optimized cell density, balancing low on-resistance with robust avalanche energy handling capabilities common in automotive transient conditions.

Single FETs, MOSFETs Replacement Considerations

Direct replacements should maintain the 60 V rating, similar RDS(on), and TO-220AB package. Verify if alternative parts hold equivalent automotive Q101 certification. Cross-reference pinouts and thermal characteristics to ensure compatibility with existing heatsinking solutions.