AUIRF1404S

Description：MOSFET N-CH 40V 75A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:6b18c4fa4c46 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF1404S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 75A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF1404S

Description：MOSFET N-CH 40V 75A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4mOhm @ 95A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：200 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7360 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 200W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF1404S

AUIRF1404S

Single FETs, MOSFETs Overview

The AUIRF1404S is an automotive-grade N-channel HEXFET power MOSFET in a D2PAK package. It features a maximum drain-source voltage of 40V and a typical on-resistance of 3.5mΩ (max 4.0mΩ). The device supports a continuous drain current of 75A (package limited) or 162A (silicon limited) at 25°C case temperature, with a pulsed drain current of 650A. Total gate charge is typically 160nC at 10V. It operates within a junction temperature range of -55°C to +175°C and includes avalanche ratings up to 519mJ.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for high reliability
Advanced planar technology enabling low on-resistance per silicon area
Fully avalanche rated with repetitive avalanche capability up to Tjmax
Fast switching speed combined with ruggedized device design

Single FETs, MOSFETs Applications

Automotive power switching applications
High-efficiency power conversion circuits
Low-voltage DC-DC converter designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'S' corresponds to the D2-Pak tube packaging configuration as defined in the manufacturer's ordering table. Confirm that the component meets the required AEC-Q101 qualification level for your specific automotive application environment before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 40V rating and low RDS(on) are required for automotive environments. Ensure thermal management accommodates the 200W dissipation rating at 25°C case temperature. Verify that the 75A package-limited current aligns with the system's continuous load requirements rather than the higher silicon-limited value.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family utilizing advanced planar technology. It is specifically engineered for automotive applications requiring robust performance under extreme temperatures. The device integrates fast switching capabilities with high ruggedness, making it suitable for demanding power electronics environments where reliability is critical.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Ensure any replacement maintains the same 40V rating, D2PAK footprint, and automotive qualification status to guarantee functional compatibility without redesigning the host circuit board.