AUIRF2807

Single FETs, MOSFETs Overview

The AUIRF2807 is an automotive-grade N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 75V and a continuous drain current of 82A (silicon limited) or 75A (package limited). The device exhibits a maximum on-resistance of 13mΩ at VGS=10V and supports a junction temperature up to 175°C. Key electrical parameters include a total gate charge of 160nC, input capacitance of 3820pF, and peak diode recovery dv/dt of 5.9V/ns. It is housed in a TO-220AB package.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards
• Advanced planar technology for low on-resistance
• Fast switching with ruggedized design
• Fully avalanche rated with repetitive avalanche capability

Single FETs, MOSFETs Applications

• Automotive power management systems
• Motor control circuits
• DC-DC converters
• High-side and low-side switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package type during procurement to ensure compatibility with your assembly process. Confirm that the component meets the required AEC-Q101 qualification level if used in automotive environments. Check the latest datasheet revision for any updates to absolute maximum ratings or thermal characteristics before finalizing designs.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust performance under high thermal stress and automotive reliability standards. Consider the 175°C operating temperature limit and the 13mΩ on-resistance for efficiency calculations. Ensure the gate drive voltage aligns with the specified VGS range for optimal RDS(on) performance and switching speed.

Single FETs, MOSFETs Part Context

The AUIRF2807 belongs to Infineon's HEXFET family, specifically tailored for automotive applications. It utilizes advanced stripe planar technology to achieve low on-resistance per silicon area. This part represents a specialized variant of the IRF2807 series, distinguished by its automotive qualification and enhanced ruggedness for demanding vehicle electronics environments.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 75V rating, TO-220AB package, and automotive qualification. Verify equivalent RDS(on), gate charge, and thermal resistance values. Cross-reference with other AEC-Q101 qualified N-channel MOSFETs from Infineon or other manufacturers ensuring identical pinout and mechanical dimensions.