AUIRF3205ZS

Single FETs, MOSFETs Overview

The AUIRF3205ZS is an N-channel HEXFET power MOSFET in a D2Pak (TO-263) surface-mount package. It features a maximum drain-source voltage of 55 V and a continuous drain current of 75 A at 25°C case temperature, with a silicon-limited rating of 110 A. The device exhibits a maximum on-resistance of 6.5 mΩ at VGS=10V and ID=66A. Key electrical parameters include a typical total gate charge of 76 nC, a maximum pulsed drain current of 440 A, and a maximum power dissipation of 170 W. It supports junction temperatures up to 175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified according to AEC-Q101 standards for high reliability applications
• Advanced process technology enables ultra-low on-resistance per silicon area
• Capable of repetitive avalanche energy operation up to the maximum junction temperature
• Designed for fast switching speeds and efficient thermal performance

Single FETs, MOSFETs Applications

• Automotive power management systems
• High-efficiency DC-DC converters
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix ZS confirms the D2Pak surface-mount configuration rather than the TO-220 through-hole variant. Confirm automotive qualification status aligns with project requirements. Check for lead-free and RoHS compliance documentation. Ensure ordering quantities match the specified tube or tape-and-reel packaging options available from authorized distributors.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount solution is required for 55 V automotive-grade applications. The D2Pak package offers lower thermal resistance compared to standard through-hole alternatives while maintaining high current handling capabilities. Consider the gate charge specifications for driving circuit design and evaluate the repetitive avalanche ratings if inductive load switching is anticipated.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family, utilizing Gen 10.2 technology. It serves as the surface-mount equivalent to the AUIRF3205Z, sharing identical electrical characteristics but differing in physical package form factor. The series is engineered for robust performance in demanding environments requiring high reliability and low conduction losses.

Single FETs, MOSFETs Replacement Considerations

The IRF3205ZPBFAKSA1 is documented as a parameter-equivalent alternative. Verify pinout compatibility and package dimensions before substitution. Ensure the replacement meets the same automotive qualification standards if applicable to the original design intent.