Single FETs, MOSFETs AUIRF3315STRL product image

AUIRF3315STRL

  • Description:MOSFET N-CH 150V 21A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:e0c2896571ae Category: Brand:

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AUIRF3315STRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 21A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF3315STRL

  • Description:MOSFET N-CH 150V 21A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:82mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 94W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRF3315STRL

AUIRF3315STRL

Single FETs, MOSFETs Overview

The AUIRF3315STRL is an automotive-grade N-channel HEXFET power MOSFET in a D2PAK package. It features a maximum drain-source voltage of 150V and a continuous drain current of 21A at 25°C case temperature. The device has a maximum on-resistance of 82mΩ at VGS=10V and ID=12A. It supports a junction temperature range from -55°C to +175°C, with a maximum power dissipation of 94W at 25°C case temperature.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards
  • Advanced planar technology for low on-resistance
  • Fast switching capability with dynamic dV/dt rating
  • Fully avalanche rated with repetitive avalanche allowance up to Tjmax

Single FETs, MOSFETs Applications

  • Automotive power management systems
  • High-side load switching applications
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'STRL' corresponds to the tape and reel packaging format containing 800 units per reel. Confirm that the component meets RoHS compliance requirements and holds the necessary automotive qualification certifications as specified by the manufacturer's documentation before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing automotive circuits requiring robust performance under high thermal stress. The 175°C operating temperature rating provides significant headroom over standard industrial grades. Ensure the gate drive voltage aligns with the 10V specification to achieve the minimum on-resistance value listed in the datasheet specifications.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically tailored for automotive environments. The 'AU' prefix indicates automotive qualification status, while the 'S' denotes the surface-mount D2PAK package type. The 'TRL' suffix specifies the tape and reel delivery method, distinguishing it from tube-packaged variants within the same electrical family.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the AUIRFB33N15D for through-hole TO-220AB applications or the IRF3315S for non-automotive grade surface mount needs. Verify pinout compatibility and thermal resistance characteristics when transitioning between different package types or qualification levels.

Single FETs, MOSFETs FAQ

Is the AUIRF3315STRL suitable for repetitive avalanche operation?

Yes, the datasheet explicitly states that the device is fully avalanche rated and allows repetitive avalanche operation up to the maximum junction temperature.

What is the peak diode recovery dv/dt rating for this MOSFET?

The peak diode recovery dv/dt rating is specified as 2.5 V/ns under conditions where ISD is less than or equal to 12A and di/dt is less than or equal to 140A/µs.

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