AUIRF7737L2TR

Single FETs, MOSFETs Overview

The AUIRF7737L2TR is an automotive-grade N-channel HEXFET power MOSFET utilizing DirectFET L8 packaging. It features a 40V drain-source breakdown voltage and a typical on-resistance of 1.5mΩ (max 1.9mΩ). The device supports a continuous drain current of 156A at 25°C case temperature and handles repetitive avalanche energy. Key electrical parameters include a gate threshold voltage of 2.0V to 4.0V, total gate charge of 89nC typ, and forward transconductance of 100S. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Advanced DirectFET packaging technology enabling dual-sided cooling for high thermal efficiency.
• Automotive qualification compliant with AEC-Q101 standards for robustness.
• Optimized low on-resistance and gate charge per silicon area for high power density.
• Repetitive avalanche capability ensuring reliability in heavy load applications.

Single FETs, MOSFETs Applications

• Automotive motor drive systems
• High frequency DC-DC converters
• Heavy load applications on ICE platforms
• Heavy load applications on HEV and EV platforms

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required reel quantity configuration. Confirm that the component meets the exact automotive grade requirements for your target application. Ensure compatibility with vapor phase, infrared, or convection soldering techniques as specified in assembly guidelines. Check for lead-free and halogen-free compliance status prior to final procurement authorization.

Single FETs, MOSFETs Selection Notes

Select this component when system design demands high power density within a small footprint comparable to a DPak. Consider its use where dual-sided cooling capabilities are available to maximize thermal transfer. Evaluate the 1.5mΩ on-resistance against conduction loss requirements. Ensure the driver circuit can handle the 89nC gate charge efficiently for switching applications.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's Automotive HEXFET series, combining silicon technology with DirectFET packaging. It is designed specifically for automotive environments requiring high reliability and efficiency. The package maintains a low profile while offering superior thermal performance compared to traditional surface mount packages.

Single FETs, MOSFETs Replacement Considerations

Direct replacement requires verifying pinout compatibility and thermal resistance characteristics. Ensure any substitute part meets AEC-Q101 automotive qualification. Compare on-resistance and gate charge values to maintain switching performance and efficiency targets in the existing circuit design.