Single FETs, MOSFETs AUIRFB8407XKMA1 product image

AUIRFB8407XKMA1

$2.99
  • Description:MOSFET_(20V 40V)
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:d82971b5ef61 Category: Brand:

  
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AUIRFB8407XKMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET_(20V 40V). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFB8407XKMA1

  • Description:MOSFET_(20V 40V)
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1.037mA
  • Gate Charge (Qg) (Max) @ Vgs:225 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7330 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):230W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRFB8407XKMA1

AUIRFB8407XKMA1

Single FETs, MOSFETs Overview

The AUIRFB8407XKMA1 is an automotive-grade N-channel power MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and features a TO-220AB-3 through-hole package. The device supports a drain-source voltage of 40 V and delivers a continuous drain current of 120 A at 25°C. Its maximum on-resistance is 2.5 mΩ, with a gate charge of 161 nC. The component operates within a temperature range of -55°C to +175°C and dissipates up to 163 W of power.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q101 standards for high reliability in vehicle environments.
  • Optimized low on-resistance characteristics to minimize conduction losses in high-current applications.
  • Robust thermal performance enabling stable operation under demanding power dissipation conditions.

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • Motor control circuits
  • High-side switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm exact electrical tolerances and packaging variations. Ensure the procurement channel provides valid traceability records required for automotive supply chains. Confirm RoHS compliance status matches project requirements before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring automotive-grade reliability and high current handling capabilities. The TO-220AB-3 package facilitates efficient heat dissipation for through-hole mounting solutions. Evaluate thermal management strategies to ensure junction temperatures remain within the specified operational limits during peak load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's portfolio of automotive power MOSFETs designed for robust performance in harsh environments. It represents a specialized solution for applications demanding high durability and efficiency. The product line integrates advanced silicon technologies to meet stringent industry standards for automotive electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully to ensure compatibility with existing board layouts and circuit designs without modifying surrounding components.

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