Single FETs, MOSFETs AUIRFP1405 product image

AUIRFP1405

$2.07
  • Description:AUIRFP1405 - 55V-60V N-CHANNEL A
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk

SKU:655ff1d6c3e1 Category: Brand:

  
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AUIRFP1405 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is AUIRFP1405 - 55V-60V N-CHANNEL A. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFP1405

  • Description:AUIRFP1405 - 55V-60V N-CHANNEL A
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:95A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:5.3mOhm @ 95A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):310W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247AC
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for AUIRFP1405

AUIRFP1405

Single FETs, MOSFETs Overview

The AUIRFP1405 is an N-channel power MOSFET manufactured by Infineon Technologies, housed in a TO-247AC through-hole package. It features a drain-source voltage (Vds) of 55 V and a continuous drain current (Id) of 95 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 3.1 mΩ at a gate-source voltage of 10 V. Thermal performance includes a power dissipation rating of 310 W at case temperature. The component utilizes advanced silicon technology for high-efficiency switching applications.

Single FETs, MOSFETs Feature Summary

  • Advanced N-channel power MOSFET technology engineered for high-efficiency power switching
  • Robust construction delivering superior performance characteristics compared to previous generations
  • Designed for reliable operation in demanding thermal environments

Single FETs, MOSFETs Applications

  • High-efficiency DC-DC converter circuits
  • Motor control systems requiring low on-resistance
  • Power supply modules utilizing through-hole mounting

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and packaging configuration against official Infineon documentation before procurement. Confirm that the TO-247AC package variant matches the design requirements. Ensure compliance with RoHS directives as indicated in the manufacturer's product specifications. Cross-reference the ordering part number to avoid confusion with similar IRFP series components.

Single FETs, MOSFETs Selection Notes

Select this component when a 55 V N-channel MOSFET with high current capability is required. The TO-247AC package facilitates effective heat dissipation for high-power applications. Consider the 3.1 mΩ on-resistance for minimizing conduction losses. Verify that the gate charge parameters align with the driving circuit capabilities for optimal switching performance.

Single FETs, MOSFETs Part Context

This device belongs to the IRFP family of power MOSFETs from Infineon Technologies. It represents an evolution in silicon power switch technology, offering improved efficiency over legacy designs. The component is distinct from surface-mount variants and is specifically designed for through-hole PCB assembly methods common in industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for direct replacements. Generic equivalents may differ in thermal resistance or gate charge characteristics. Verify pinout compatibility and ensure voltage ratings exceed circuit requirements when considering alternative parts.

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