AUIRFR120Z

Single FETs, MOSFETs Overview

The AUIRFR120Z is an automotive-grade N-channel Power MOSFET from the HEXFET family, manufactured by Infineon Technologies (formerly International Rectifier). It features a 100V drain-source breakdown voltage and a continuous drain current of 3.1A. The device exhibits a maximum on-resistance of 190mΩ at a gate-source voltage of 10V. Designed for surface-mount applications, it utilizes the DPAK-3 (TO-252-3) package. The component supports a junction temperature range from -55°C to +175°C and offers a power dissipation rating of 35W.

Single FETs, MOSFETs Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for high reliability in vehicle environments
• HEXFET technology providing low on-resistance for efficient power switching
• Enhanced thermal performance via robust TO-252AA surface-mount packaging

Single FETs, MOSFETs Applications

• Automotive load switching circuits
• DC motor control systems
• High-side and low-side power management

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'Z' against the manufacturer's official datasheet to confirm lead-free status and RoHS compliance. Confirm that the part number corresponds to the tape-and-reel or cut-tape variant as required by your assembly process. Ensure the component meets the specific automotive grade requirements for your target application before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring automotive-grade reliability with moderate current handling capabilities around 3.1A. The 190mΩ on-resistance makes it suitable for applications where conduction losses must be minimized without excessive heat generation. Consider the TO-252-3 package constraints regarding PCB thermal dissipation and available mounting space for optimal integration.

Single FETs, MOSFETs Part Context

This component belongs to the IRFR series of power MOSFETs, which are widely used in power electronics. The 'AU' prefix typically denotes automotive qualification, distinguishing it from standard industrial variants. As part of the HEXFET portfolio, it leverages planar strip technology to achieve superior performance characteristics compared to older generations of power transistors.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include the IRFR120TRR for non-automotive contexts, provided the lower Rds(on) and higher current ratings are acceptable. Verify pinout compatibility and thermal characteristics when substituting with other TO-252 packages.