AUIRFR2405

Single FETs, MOSFETs Overview

The AUIRFR2405 is an automotive-grade N-channel HEXFET power MOSFET in a D-Pak (TO-252AA) package. It features a drain-source breakdown voltage of 55V and a maximum continuous drain current of 30A, limited by the package. The device exhibits a typical on-resistance of 11.8mΩ at VGS=10V and ID=34A. Key electrical parameters include a gate threshold voltage range of 2.0V to 4.0V, total gate charge of 70nC typ., and single pulse avalanche energy of 130mJ. It supports junction temperatures up to 175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for high reliability applications
• Advanced planar technology ensures low on-resistance per silicon area
• Fully avalanche rated with repetitive avalanche capability up to Tjmax
• Fast switching speed combined with dynamic dv/dt rating

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-side and low-side load switches
• DC motor control circuits
• General purpose power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your manufacturing needs. The standard tube form is AUIRFR2405, while tape and reel options are available as AUIRFR2405TRL. Confirm that the component meets the necessary automotive qualification standards for your final assembly process before placing orders.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and ruggedized design are critical requirements. It is suitable for designs requiring fast switching and high surge current handling capabilities. Ensure the thermal management strategy accounts for the package-limited continuous current of 30A rather than the silicon-limited value.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, utilizing Stripe Planar design techniques. It represents an evolution in power MOSFET technology aimed at reducing unit area resistance while maintaining robust performance under harsh operating conditions typical of automotive environments.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 55V rating, TO-252 package, and automotive qualification. Verify that alternative devices meet or exceed the 11.8mΩ on-resistance and 130mJ avalanche energy specifications to ensure circuit compatibility.