Single FETs, MOSFETs AUIRFR2607Z product image

AUIRFR2607Z

  • Description:MOSFET N-CH 75V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:22cecfece8c5 Category: Brand:

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AUIRFR2607Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR2607Z

  • Description:MOSFET N-CH 75V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):75 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:22mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):110W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR2607Z

AUIRFR2607Z

Single FETs, MOSFETs Overview

The AUIRFR2607Z is an automotive-grade, single N-channel HEXFET power MOSFET housed in a D-Pak (TO-252AA) package. It features a 75V drain-source breakdown voltage and a maximum on-resistance of 22mΩ at VGS=10V. The device supports continuous drain currents up to 45A (silicon limited) or 42A (package limited). Key electrical parameters include a gate threshold voltage range of 2.0V to 4.0V, total gate charge of 34nC, and a maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards for high reliability
  • Advanced process technology enables ultra-low on-resistance
  • Capable of repetitive avalanche operation up to Tjmax
  • Fast switching speed with improved thermal performance

Single FETs, MOSFETs Applications

  • Automotive power management systems
  • High-efficiency motor control applications
  • General-purpose power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your production needs. Standard tubes are available under part number AUIRFR2607Z, while tape and reel options exist as AUIRFR2607ZTRL. Confirm moisture sensitivity level MSL1 compliance and RoHS status during sourcing to ensure alignment with assembly requirements.

Single FETs, MOSFETs Selection Notes

Select this component when automotive qualification and high thermal stability are critical. The 175°C operating temperature rating allows for robust performance in demanding environments. Ensure the application current remains within the 42A package-limited constraint to maintain device integrity.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family, utilizing advanced processing techniques to minimize resistance per silicon area. It is specifically engineered for automotive applications where efficiency and reliability are paramount. The D-Pak package provides a balance of thermal dissipation and compact footprint.

Single FETs, MOSFETs Replacement Considerations

Consult official documentation for direct substitutes. Verify pinout compatibility and electrical parameter margins before replacing existing designs with alternative part numbers.

Single FETs, MOSFETs FAQ

Is the AUIRFR2607Z suitable for repetitive avalanche operations?

Yes, the datasheet explicitly states that repetitive avalanche is allowed up to the maximum junction temperature (Tjmax).

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 45A when limited by silicon characteristics at TC=25°C, and 42A when limited by the package.

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