AUIRFS3006-7TRL

Single FETs, MOSFETs Overview

The AUIRFS3006-7TRL is a single N-channel HEXFET power MOSFET in a D2Pak 7-pin package. It features a 60V drain-source breakdown voltage and a maximum on-resistance of 2.1mΩ at VGS=10V. The device supports a continuous silicon-limited drain current of 293A and a package-limited current of 240A. Key electrical parameters include a total gate charge of 200nC, a peak diode recovery dv/dt rating of 11V/ns, and an operating junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for high reliability
• Advanced process technology enabling ultra-low on-resistance
• Fast switching speed with improved repetitive avalanche rating

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control applications requiring high efficiency
• General purpose switching circuits in automotive environments

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TRL' corresponds to the Tape and Reel form factor containing 800 units per reel. Confirm that the component meets the required Automotive qualification level (AEC-Q101) for your target application environment. Ensure compatibility with the D2Pak 7-pin footprint during PCB layout validation.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V N-channel MOSFET with low conduction losses is required for automotive use. The 2.1mΩ maximum RDS(on) ensures efficient power handling. Consider the 240A package-limited current if thermal management relies on case mounting rather than silicon limits.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs designed for robust performance. The 'AU' prefix indicates automotive grade qualification, while the '-7' denotes the specific generation of process technology used to achieve the stated electrical characteristics and thermal resilience.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Verify pinout compatibility and electrical ratings against alternative D2Pak 7-pin devices before implementation.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy allowed?

The device allows repetitive avalanche operation up to the maximum junction temperature (Tjmax), with a single pulse avalanche energy limit of 303 mJ under specified test conditions.

How does the package limit the continuous drain current?

While the silicon can support 293A, the D2Pak 7-pin package limits the continuous drain current to 240A due to bond wire and lead heating constraints.