Single FETs, MOSFETs AUIRFS3207Z product image

AUIRFS3207Z

  • Description:MOSFET N-CH 75V 120A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:ef08c1a617d7 Category: Brand:

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AUIRFS3207Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 120A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS3207Z

  • Description:MOSFET N-CH 75V 120A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):75 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:4.1mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6920 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):300W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS3207Z

AUIRFS3207Z

Single FETs, MOSFETs Overview

The AUIRFS3207Z is an automotive-grade, single N-channel power MOSFET manufactured by Infineon Technologies using advanced silicon planar trench technology. Designed for high-current applications, it features a maximum drain-source voltage (Vds) of 75 V and a continuous drain current (Id) of 120 A at case temperature. The device exhibits a low on-resistance (Rds(on)) of 3 mΩ at Vgs = 10 V. It supports junction temperatures up to 175°C and is qualified under AEC-Q100 standards. The component is housed in a surface-mount D2PAK package.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q100 standards
  • Advanced silicon planar trench technology for low on-resistance
  • High thermal stability supporting 175°C junction temperature
  • Single N-channel configuration optimized for high-current switching

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side and low-side load switches
  • DC-DC converter output stages
  • Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'Z' indicates RoHS compliance and halogen-free status as per Infineon documentation. Confirm the package variant matches the required D2PAK footprint. Check for any recent lifecycle notices or obsolescence warnings directly from the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and high current handling are required. Ensure the application voltage remains below the 75 V limit. Verify that the PCB layout can support the thermal requirements for 120 A operation. Compare Rds(on) specifications against alternative packages if space constraints differ.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's IRFS series of automotive MOSFETs. It shares the same die and electrical characteristics as the non-automotive IRFS3207Z but includes additional qualification testing for automotive environments. It serves as a ruggedized alternative for industrial and consumer electronics requiring higher reliability.

Single FETs, MOSFETs Replacement Considerations

The IRFS3207Z is the non-automotive equivalent with identical electrical performance. For pin-compatible alternatives, verify Rds(on) and Qg values match the design requirements. Ensure any substitute meets AEC-Q100 standards if automotive use is intended.

AUIRFS3207ZAUIRFS3207Z

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