AUIRFS3306TRL

Single FETs, MOSFETs Overview

The AUIRFS3306TRL is a single N-channel HEXFET power MOSFET in D2PAK (TO-263) tape and reel packaging. It features a 60V drain-source breakdown voltage and a maximum on-resistance of 4.2mΩ at VGS=10V. The device supports continuous drain currents up to 160A (silicon limited) or 120A (package limited). Key electrical parameters include a total gate charge of 85nC, a peak diode recovery dv/dt of 14V/ns, and a junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified according to AEC-Q101 standards for reliability
• Advanced process technology enabling ultra-low specific on-resistance
• Capable of repetitive avalanche energy operation up to the maximum junction temperature
• Fast switching characteristics with high peak diode recovery dv/dt capability

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-efficiency DC-DC converter circuits
• Motor control applications requiring robust avalanche performance

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact Infineon part number AUIRFS3306TRL. Confirm the package type is D2PAK and the delivery form is tape and reel. Check the datasheet revision date and ensure the supplier provides valid traceability documentation. Validate that the device meets the specified automotive qualification requirements before integration into production designs.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V rating is required alongside low conduction losses. The 175°C operating temperature allows for higher thermal margins compared to standard 150°C devices. Ensure the application circuit can handle the 14V/ns peak diode recovery rate to prevent false triggering. Verify that the PCB footprint accommodates the D2PAK package dimensions and thermal requirements.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family of power MOSFETs designed for high-current applications. The 'TRL' suffix indicates the specific tape and reel packaging format used for automated surface-mount assembly. It utilizes silicon-based technology optimized for automotive environments, distinguishing it from wider industrial MOSFET lines through its specific qualification testing protocols.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 60V rating, D2PAK package, and similar RDS(on) specifications. Verify pinout compatibility and thermal resistance values. Consider upgrading to newer generation parts if lower gate charge or improved avalanche ruggedness is needed for the specific application constraints.

Single FETs, MOSFETs FAQ

What is the maximum allowable repetitive avalanche energy?

The device allows repetitive avalanche operation up to the maximum junction temperature (Tjmax), provided the thermal limits defined in the safe operating area curves are not exceeded.

How does the package limit the continuous drain current?

While the silicon die supports up to 160A, the wire bonds and lead frame limit the continuous drain current to 120A under standard mounting conditions.

Is this component suitable for high-frequency switching?

Yes, it features fast switching times with a typical turn-on delay of 15ns and rise time of 76ns, along with a high peak diode recovery dv/dt of 14V/ns.