AUIRFS4010-7P

Single FETs, MOSFETs Overview

The AUIRFS4010-7P is a single N-channel HEXFET power MOSFET from Infineon Technologies, housed in a D2-Pak 7-pin surface-mount package. It features a drain-source breakdown voltage (VDS) of 100 V and a maximum continuous drain current (ID) of 190 A at 25°C case temperature. The device exhibits a typical on-resistance (RDS(on)) of 3.3 mΩ with a maximum of 4.0 mΩ at VGS = 10 V. Key electrical parameters include a total gate charge (Qg) of 150 nC, a peak diode recovery dV/dt rating of 26 V/ns, and a junction-to-case thermal resistance (RθJC) of 0.4 K/W. It supports an operating junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified according to AEC-Q101 standards for high reliability applications
• Advanced process technology enabling ultra-low on-resistance per silicon area
• Enhanced capability for repetitive avalanche energy up to maximum junction temperature
• Fast switching speed combined with improved dV/dt and dI/dT performance

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control circuits
• High-efficiency DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm packaging format, as standard packs may differ from tape and reel variants. Confirm that the component meets the required automotive qualification level (AEC-Q101) for your target application environment. Ensure thermal management designs account for the specified junction-to-case resistance values under actual mounting conditions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade performance with low conduction losses. The 100 V rating and 190 A current capacity suit high-power density applications. Evaluate the thermal impedance characteristics against your PCB layout constraints to ensure safe operation within the 175°C junction limit during peak load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family of power MOSFETs, specifically optimized for automotive environments. It utilizes advanced trench technology to minimize resistance while maintaining high switching speeds. The D2-Pak 7-pin package provides efficient heat dissipation capabilities suitable for surface-mount assembly processes commonly used in modern electronic manufacturing.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts, thermal resistance, and electrical ratings carefully before replacing existing components in production designs.