AUIRFS6535

Single FETs, MOSFETs Overview

The AUIRFS6535 is an automotive-grade N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a 300V drain-source breakdown voltage and a maximum on-resistance of 185mΩ at VGS=10V, with a typical value of 148mΩ. The device supports a continuous drain current of 19A at 25°C case temperature and handles pulsed currents up to 100A. Operating within a junction temperature range of -55°C to +175°C, it offers robust thermal performance with a maximum power dissipation of 210W. Key dynamic characteristics include a total gate charge of 57nC and fast switching times.

Single FETs, MOSFETs Feature Summary

• Advanced process technology enabling extremely low on-resistance per silicon area
• Automotive qualification compliant with AEC-Q101 standards
• Capable of repetitive avalanche operation up to the maximum junction temperature
• Fast switching speed combined with improved dv/dt and di/dt capabilities

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-side and low-side load switches
• DC-DC converter circuits in vehicle electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required for your design, as the base part number corresponds to the D2-Pak (TO-263AB) surface-mount configuration. Ensure that the ordering suffix matches the desired tape and reel quantity if mass production is planned, distinct from the standard tube packaging. Confirm that the component meets the specific reliability requirements of your target automotive application segment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 300V rating is necessary for automotive environments requiring operation up to 175°C. The low RDS(on) makes it suitable for applications prioritizing conduction loss reduction. Consider the thermal resistance and safe operating area curves to ensure adequate heat sinking or PCB copper area is provided to maintain junction temperatures within limits during peak load conditions.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family of power MOSFETs, specifically optimized for automotive use. It utilizes advanced trench technology to achieve superior performance compared to previous generations. The AUIRFS6535 is part of a broader portfolio of automotive-grade transistors designed to meet stringent industry reliability standards while providing efficient power management solutions.

Single FETs, MOSFETs Replacement Considerations

The through-hole equivalent is the AUIRFSL6535, which shares identical electrical specifications but uses a TO-262 package. Designers transitioning between these variants must account for differences in thermal resistance and physical footprint dimensions to ensure proper mounting and heat dissipation.

Single FETs, MOSFETs FAQ

Is the AUIRFS6535 qualified for automotive applications?

Yes, the AUIRFS6535 is qualified according to the AEC-Q101 standard for automotive grade components.

What is the maximum junction temperature for this MOSFET?

The maximum operating junction temperature is 175°C.

Can the device handle repetitive avalanche energy?

Yes, the device allows for repetitive avalanche operation up to the maximum junction temperature, subject to thermal limitations defined in the datasheet figures.