AUIRFSA8409-7P

Single FETs, MOSFETs Overview

The AUIRFSA8409-7P is an N-channel enhancement mode HEXFET power MOSFET in a D2PAK-7TP package. It features a maximum drain-source voltage of 40 V and a typical on-resistance of 0.50 mΩ, with a maximum rating of 0.69 mΩ at VGS = 10V and ID = 100A. The device supports a continuous silicon-limited drain current of 523 A at TC = 25°C, while the package-limited current is 360 A. Maximum power dissipation reaches 375 W at TC = 25°C. Operating junction temperature ranges from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for high reliability
• Advanced process technology enabling ultra-low on-resistance
• Fast switching speed with improved repetitive avalanche rating
• Capable of operation up to 175°C junction temperature

Single FETs, MOSFETs Applications

• Electric Power Steering (EPS)
• Battery Switch
• Start/Stop Micro Hybrid systems
• Heavy Loads
• DC-DC Applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm that the part matches the specific automotive qualification requirements for your application. Ensure proper handling procedures are followed due to ESD sensitivity ratings. Review the datasheet for absolute maximum ratings before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses and high current capacity are required in automotive environments. Consider the thermal resistance characteristics and package limitations for heat dissipation. Evaluate gate charge parameters against driver capabilities to optimize switching performance. Ensure the operating voltage and current levels remain within specified safe operating area limits.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's COOLiRFET series, designed specifically for demanding automotive applications. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The HEXFET architecture provides robust performance under high stress conditions, making it suitable for power management tasks in vehicles.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and electrical specifications before substituting. Verify that any alternative component meets the same automotive qualification standards. Ensure thermal performance and package dimensions align with existing board layouts.

Single FETs, MOSFETs FAQ

What is the difference between silicon-limited and package-limited drain current?

Silicon-limited current (523 A) represents the theoretical maximum based on junction temperature constraints, while package-limited current (360 A) reflects the physical limit imposed by bond wires and lead heating.

Is repetitive avalanche operation allowed for this MOSFET?

Yes, the device allows repetitive avalanche operation up to the maximum junction temperature (Tjmax), provided the single pulse avalanche energy limits are not exceeded.