AUIRFSL4310

Description：MOSFET N-CH 100V 75A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:1e7851e326c3 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFSL4310 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 75A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFSL4310

Description：MOSFET N-CH 100V 75A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：250 nC @ 10 V
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：7670 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AUIRFSL4310

AUIRFSL4310

Single FETs, MOSFETs Overview

The AUIRFSL4310 is a HEXFET power MOSFET in TO-262 packaging, rated for 100V drain-source voltage and up to 130A continuous drain current. It features a maximum on-resistance of 7.0mΩ at VGS=10V and supports junction temperatures up to 175°C. The device includes automotive qualification per AEC-Q101, fast switching capabilities, and repetitive avalanche rating.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Advanced process technology for ultra-low on-resistance
Fast switching speed with dynamic dv/dt rating
Repetitive avalanche allowed up to Tjmax

Single FETs, MOSFETs Applications

Automotive applications
Power management systems
Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (TO-262 vs D2-Pak) matches your design requirements. Confirm automotive grade status if required by your application specifications. Check datasheet revision history for any updates to electrical characteristics or thermal parameters before finalizing component selection.

Single FETs, MOSFETs Selection Notes

Consider the silicon-limited versus package-limited current ratings when designing thermal solutions. Ensure gate drive voltage meets the 10V requirement for optimal RDS(on). Evaluate thermal resistance values based on PCB mounting conditions to maintain junction temperature within safe operating limits.

Single FETs, MOSFETs Part Context

This component belongs to Infineon's HEXFET family of power MOSFETs. It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The part is designed for high-efficiency and reliable operation in demanding environments.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting. Verify that replacement parts meet the same automotive qualification standards and electrical ratings for voltage, current, and on-resistance.