AUIRFSL8407

Description：MOSFET N-CH 40V 195A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:bd2e6551463c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFSL8407 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 195A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFSL8407

Description：MOSFET N-CH 40V 195A TO262
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：225 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7330 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：230W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AUIRFSL8407

AUIRFSL8407

Single FETs, MOSFETs Overview

The AUIRFSL8407 is an automotive-grade N-channel enhancement mode power MOSFET from Infineon Technologies, utilizing advanced HEXFET process technology. It features a TO-262 (I2PAK) through-hole package and is designed for high-efficiency switching applications. The device supports a maximum drain-source voltage of 40 V and offers a typical on-resistance of 1.4 mΩ with a maximum rating of 1.8 mΩ at 10 V gate drive. It provides a continuous drain current capability of up to 250 A when silicon-limited or 195 A when package-limited. The component operates within a junction temperature range of -55°C to +175°C and includes repetitive avalanche ratings.

Single FETs, MOSFETs Feature Summary

Automotive qualified according to AEC-Q101 standards
Advanced HEXFET processing for low on-resistance
Capable of repetitive avalanche operation up to Tjmax
Fast switching speed with improved thermal performance

Single FETs, MOSFETs Applications

Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid systems
Heavy Loads
DC-DC Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the procurement channel is authorized to guarantee authenticity and traceability for automotive-grade components.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust automotive reliability and high current handling in a through-hole format. Consider the 1.8 mΩ maximum RDS(on) for conduction loss calculations and verify PCB layout compatibility with the TO-262 footprint. Evaluate thermal management requirements based on the 0.65 K/W junction-to-case resistance.

Single FETs, MOSFETs Part Context

This part belongs to the COOLiRFET family of automotive MOSFETs. It shares design characteristics with surface-mount variants like the AUIRFS8407 but utilizes a different package form factor suitable for through-hole mounting. The device represents Generation 12.7 technology optimized for automotive electrical architectures.