AUIRL2203N

Description：MOSFET N-CH 30V 75A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:c6e542ac05ee Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRL2203N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 75A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRL2203N

Description：MOSFET N-CH 30V 75A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 4.5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：3290 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：180W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRL2203N

AUIRL2203N

Single FETs, MOSFETs Overview

The AUIRL2203N is an N-channel HEXFET power MOSFET in a TO-220AB package. It features a drain-source voltage of 30V and a continuous drain current of 116A (silicon limited) or 75A (package limited). The maximum on-resistance is 7mΩ at VGS=10V and 10mΩ at VGS=4.5V. Gate threshold voltage ranges from 1.0V to 3.0V, with a total gate charge of 60nC at VGS=4.5V. Operating junction temperature spans -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Logic level gate drive capability
Fully avalanche rated with repetitive avalanche allowance up to Tjmax
Advanced planar technology for low on-resistance

Single FETs, MOSFETs Applications

Automotive applications
Power switching circuits
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the component matches the specific automotive qualification requirements and package type. Confirm that the ordering suffix aligns with the intended application environment. Ensure compatibility with existing thermal management designs given the TO-220AB form factor. Check for any process change notifications associated with this part number before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and high current handling are required in automotive environments. Consider the logic level gate drive feature for direct microcontroller interfacing. Evaluate thermal resistance values against system heat dissipation capabilities. Verify that the 30V rating provides sufficient margin for the target circuit's operating voltage.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes stripe planar design techniques to achieve low on-resistance per silicon area. The product line is known for fast switching speeds and ruggedized device design suitable for demanding power electronics applications.