AUIRLL024ZTR

$1.32

Description：MOSFET N-CH 55V 5A SOT223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:19d7448c88e3 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AUIRLL024ZTR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 5A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLL024ZTR

Description：MOSFET N-CH 55V 5A SOT223
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：380 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for AUIRLL024ZTR

AUIRLL024ZTR

Single FETs, MOSFETs Overview

The AUIRLL024ZTR is an automotive-grade N-channel power MOSFET from Infineon Technologies, utilizing Trench technology. It features a maximum drain-source voltage (VDS) of 55 V and a continuous drain current (ID) of 5 A at Ta. The device offers a maximum on-resistance (RDS(on)) of 60 mOhm and operates within a junction temperature range up to +175 °C. Key electrical parameters include a fall time of 15 ns, rise time of 33 ns, and forward transconductance of 7.5 S. It is housed in a surface-mount SOT-223 package with a power dissipation rating of 2.8 W.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with AEC-Q100 standards for reliability
High thermal stability supporting operation up to +175 °C junction temperature
Low on-resistance design for efficient power switching applications

Single FETs, MOSFETs Applications

Automotive power management systems
Motor control circuits
Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix ZTR indicates tape-and-reel packaging configuration. Confirm current manufacturing status as some sources indicate obsolescence; check for direct substitutes like FDT86102LZ if availability is required. Ensure the component meets AEC-Q100 requirements for your specific automotive application context.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-rated N-channel MOSFET with 55 V capability and SOT-223 footprint is required. Consider the 5 A current rating and 60 mOhm RDS(on) for efficiency needs. Verify compatibility with high-temperature environments due to the +175 °C rating. Compare against standard industrial grades if automotive certification is not mandatory.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET® series of single N-channel MOSFETs. It is the automotive variant of the IRLL024Z, distinguished by its AEC-Q100 qualification. The family focuses on low-loss switching solutions for compact surface-mount designs in demanding electronic environments.