AUIRLR024NTRL

Single FETs, MOSFETs Overview

The AUIRLR024NTRL is an automotive-grade N-channel Power MOSFET manufactured by International Rectifier. It features a 55V drain-source breakdown voltage and a maximum on-resistance of 75 milliohms at room temperature. The device supports a continuous drain current of 28 amperes and operates with a logic-level gate drive, allowing direct interfacing with standard microcontrollers. Packaged in a lead-free, RoHS-compliant DPAK (TO-252AA) housing, it is designed for high-efficiency switching applications within harsh automotive environments.

Single FETs, MOSFETs Feature Summary

• Automotive qualified to AEC-Q101 standards for enhanced reliability
• Logic level gate drive capability for simplified control integration
• Advanced planar technology ensures low on-resistance per silicon area
• Fully avalanche rated with repetitive avalanche allowance up to maximum junction temperature

Single FETs, MOSFETs Applications

• Automotive power management systems
• DC-DC converter circuits
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TRL' indicates tape-and-reel packaging when sourcing. Confirm that the component meets RoHS compliance requirements if restricted substances are prohibited in your assembly process. Ensure the supplier provides traceability documentation consistent with automotive quality standards.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust performance in automotive environments where space is limited. The logic-level gate drive simplifies driver circuit design compared to standard threshold devices. Verify that the thermal management solution accommodates the DPAK package's heat dissipation capabilities under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from International Rectifier, now part of Infineon Technologies. The series utilizes advanced planar processing techniques to achieve superior electrical characteristics. These devices are engineered specifically to meet the rigorous demands of automotive electronics, offering high efficiency and ruggedness.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other automotive-grade N-channel MOSFETs featuring similar 55V ratings and DPAK packages. Ensure any substitute matches the logic-level gate threshold and maintains equivalent avalanche energy ratings for direct replacement.