AUIRLR2905

Description：MOSFET N-CH 55V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:c4e8c3b8f2d7 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRLR2905 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLR2905

Description：MOSFET N-CH 55V 42A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRLR2905

AUIRLR2905

Single FETs, MOSFETs Overview

The AUIRLR2905 is an automotive-grade N-channel HEXFET power MOSFET featuring a D-Pak (TO-252) surface-mount package. It provides a maximum drain-source voltage of 55V and a continuous drain current of 42A at 25°C case temperature. The device exhibits a maximum on-resistance of 27mΩ at VGS=10V and 40mΩ at VGS=4.5V, supporting logic-level gate drive. Key electrical characteristics include a total gate charge of 48nC, a single-pulse avalanche energy rating of 210mJ, and a peak diode recovery dv/dt of 5.0V/ns. It operates within a junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards for high reliability in vehicle applications
Advanced planar technology enables low on-resistance per silicon area
Fully avalanche rated with repetitive avalanche capability up to Tjmax
Logic level gate drive allows efficient control from standard microcontrollers

Single FETs, MOSFETs Applications

Automotive power switching circuits
Motor control systems
High-side and low-side load switches
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the correct packaging format, such as tube or tape and reel quantities. Ensure that the component meets the required automotive qualification standards for your specific application environment. Cross-reference the datasheet revision history to confirm the accuracy of the provided electrical parameters before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust automotive-grade performance with a 55V voltage rating. The low on-resistance minimizes conduction losses, while the fast switching speed reduces dynamic power dissipation. Consider the thermal resistance values and safe operating area curves to ensure adequate heat dissipation under expected load conditions and ambient temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It utilizes advanced planar technology to achieve high efficiency and ruggedness. The 'AU' prefix indicates its qualification for automotive applications, distinguishing it from standard industrial variants. It is designed to provide reliable performance in demanding environments typical of modern vehicle electronics.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's official cross-reference lists for verified substitutes. Ensure any replacement maintains the same voltage, current, and thermal ratings. Verify compatibility with existing PCB footprints and gate drive requirements to prevent circuit malfunction.