BAS16V-7

Diode Arrays Overview

The BAS16V-7 is a dual surface mount switching diode manufactured by Diodes Incorporated. It features a non-repetitive peak reverse voltage of 100 V and a peak repetitive reverse voltage of 75 V. The device supports a forward continuous current of 300 mA and an average rectified output current of 200 mA. Electrical characteristics include a maximum reverse recovery time of 4.0 ns and a total capacitance of 2.0 pF at 0 V reverse bias. Power dissipation is rated at 150 mW with a thermal resistance junction to ambient air of 833 °C/W. The component operates within a temperature range of -55°C to +150°C.

Diode Arrays Feature Summary

• Dual configuration designed for high-speed general-purpose switching applications
• Surface-mount package optimized for automated insertion processes
• High conductance performance with low leakage current specifications

Diode Arrays Applications

• General purpose switching circuits
• Automated assembly environments requiring small form factor components

Diode Arrays Procurement Notes

Verify the specific ordering suffix matches the required packing quantity, as standard configurations utilize tape and reel packaging. Confirm compliance requirements such as RoHS directives and halogen-free status against project specifications. Ensure the selected variant aligns with the intended thermal management strategy given the specified power dissipation limits.

Diode Arrays Selection Notes

Select this component when a compact dual-diode solution is required for high-speed signal processing or rectification tasks. Evaluate the 75 V working peak reverse voltage against circuit operating conditions to ensure adequate safety margins. Consider the SOT563 package dimensions for PCB layout constraints and verify that the 150 mW power dissipation rating accommodates the expected thermal load in the final application environment.

Diode Arrays Part Context

This part belongs to the BAS16 series of dual surface mount switching diodes produced by Diodes Incorporated. The series utilizes silicon junction technology housed in plastic molded packages. These components are engineered for efficient space utilization in modern electronic assemblies while maintaining reliable switching performance under varying temperature conditions.

Diode Arrays Replacement Considerations

BAS16TW-7-F

Diode Arrays FAQ

What is the maximum non-repetitive peak reverse voltage for the BAS16V-7?

The maximum non-repetitive peak reverse voltage (VRM) is 100 V.

Does the BAS16V-7 meet environmental compliance standards?

Yes, the device is totally lead-free, fully RoHS compliant, and halogen and antimony free.

What is the typical reverse recovery time for this component?

The typical reverse recovery time (tRR) is 4.0 ns under specified test conditions.