RF Diode BAT1707E6327HTSA1 product image

BAT1707E6327HTSA1

$0.29
  • Description:DIODE SCHOTTKY 4V 150MW SOT143-4
  • Series:-

SKU:b6dc8aec9dd7 Category: Brand:

  
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BAT1707E6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 4V 150MW SOT143-4. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT1707E6327HTSA1

  • Description:DIODE SCHOTTKY 4V 150MW SOT143-4
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - 2 Independent
  • Voltage - Peak Reverse (Max):4V
  • Current - Max:130 mA
  • Capacitance @ Vr, F:0.75pF @ 0V, 1MHz
  • Resistance @ If, F:15Ohm @ 5mA, 10kHz
  • Power Dissipation (Max):150 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:PG-SOT-143-3D
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT1707E6327HTSA1

BAT1707E6327HTSA1

RF Diode Overview

The BAT1707E6327HTSA1 is a silicon Schottky diode manufactured by Infineon Technologies, designed for mixer applications in the VHF/UHF range and high-speed switching. It features a parallel pair configuration within an SOT-143 package. The device supports a maximum reverse voltage of 4 V and a forward current of 130 mA. Key electrical characteristics include a typical diode capacitance of 0.55 pF at 0 V and 1 MHz, and a differential forward resistance of 8 Ω at 5 mA and 10 kHz. It operates within a junction temperature range up to 150 °C and complies with AEC-Q101 qualification standards.

RF Diode Feature Summary

  • Parallel pair configuration optimized for low parasitic inductance
  • Suitable for VHF/UHF mixer applications due to minimal capacitance
  • Qualified according to AEC-Q101 automotive standards

RF Diode Applications

  • Mixer applications in VHF/UHF range
  • High-speed switching applications

RF Diode Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering suffix matches the specific package and marking requirements. Ensure compliance with RoHS directives as indicated by the Pb-free designation. Check for any specific handling precautions related to ESD sensitivity during storage and assembly processes.

RF Diode Selection Notes

Select this component when a parallel diode configuration is required for balanced signal processing or reduced impedance in RF circuits. The SOT-143 package offers a compact footprint suitable for space-constrained designs. Consider the low capacitance value for high-frequency performance requirements exceeding standard single-diode solutions.

RF Diode Part Context

This part belongs to the BAT17 series of silicon Schottky diodes from Infineon Technologies. The series includes various configurations such as single, series, common cathode, common anode, and parallel pairs across different packages like SOT-23, SOT-323, and SOT-143. The BAT1707 specifically utilizes the SOT-143 package to provide a parallel pair arrangement.

RF Diode Replacement Considerations

BAT1704E6327HTSA1 (Series configuration in SOT-23)

RF Diode FAQ

What is the typical diode capacitance of the BAT1707?

The typical diode capacitance is 0.55 pF measured at 0 V reverse bias and 1 MHz frequency.

What is the internal configuration of the BAT1707?

The BAT1707 contains a parallel pair of Schottky diodes within a single SOT-143 package.

Is the BAT1707 qualified for automotive applications?

Yes, the component is qualified according to the AEC-Q101 standard.

BAT1707E6327HTSA1BAT1707E6327HTSA1
$0.29
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