BM60212FV-CE2

Gate Driver Overview

The BM60212FV-CE2 is a high-side and low-side gate driver IC designed for driving N-channel power MOSFETs and IGBTs. It features a high-side floating supply voltage capability of up to 1200 V, enabling operation in half-bridge configurations. The device provides two independent drivers with an output current capacity of 5 A. It operates within a supply voltage range of 10 V to 24 V and supports non-inverting logic inputs compatible with 3.3 V and 5.0 V standards. Key electrical parameters include a maximum propagation delay of 25 ns, rise and fall times of 50 ns, and maximum on/off delays of 75 ns. The component is qualified under AEC-Q100 Grade 1 standards and functions reliably across an operating temperature range of -40°C to +125°C.

Gate Driver Feature Summary

• High-side floating supply voltage rated at 1200 V for robust half-bridge applications
• Integrated active Miller clamping to prevent false turn-on events
• Built-in under-voltage lockout (UVLO) protection for both high-side and low-side supplies
• Compatible with standard 3.3 V and 5.0 V input logic levels

Gate Driver Applications

• Driving IGBT power devices in half-bridge topologies
• Gate control for N-channel power MOSFETs in automotive systems
• Inverter circuits requiring high-voltage isolation support
• Motor drive applications utilizing high-side and low-side switching

Gate Driver Procurement Notes

Verify the specific ordering suffix to ensure compliance with package type and tape/reel specifications. Confirm that the procurement channel sources genuine ROHM Semiconductor products to maintain AEC-Q100 qualification integrity. Check for any obsolescence notices, as this part may be designated as not recommended for new designs depending on the current production status. Ensure storage conditions align with moisture sensitivity level requirements prior to surface mount assembly.

Gate Driver Selection Notes

Select this component when a dual-channel gate driver with 1200 V high-side capability is required for automotive or industrial power electronics. It is suitable for designs needing integrated Miller clamping and UVLO without external discrete components. Consider the SSOP-B20W package constraints and thermal dissipation needs for the target application environment. Verify that the input signal timing meets the minimum pulse width requirements to ensure reliable switching performance.

Gate Driver Part Context

The BM60212FV-CE2 belongs to ROHM's family of isolated and non-isolated gate driver ICs tailored for power conversion. It complements other drivers like the BM60059FV-C by offering a cost-effective solution for half-bridge applications where full galvanic isolation between channels is not strictly mandated but high-voltage handling is critical. This series supports functional safety analysis for automotive use cases.

Gate Driver Replacement Considerations

BM60212FV-C

Gate Driver FAQ

Does the BM60212FV-CE2 include short-circuit protection?

No, the BM60212FV-CE2 does not include built-in short-circuit protection (SCP). Designers must implement external circuitry or rely on the system-level protection mechanisms.

What is the minimum input pulse width supported by this driver?

The minimum input pulse width is 60 ns, ensuring reliable detection of control signals for high-frequency switching applications.